Low temperature open tube Zn diffusion in InP/InGaAs(P)

1988 ◽  
Vol 5 (3) ◽  
pp. 233-238
Author(s):  
Li Weidan ◽  
Pan Huizhen
Keyword(s):  
Low Temperature ◽  
Zn Diffusion ◽  
Open Tube

A study of Zn diffusion in InP at low temperature

1984 ◽  
Vol 1 (3) ◽  
pp. 177-181
Author(s):  
Zhang Guicheng ◽  
Xu Shaohua ◽  
Shui Hailong
Keyword(s):  
Low Temperature ◽  
Zn Diffusion

InGaAsP variable optical attenuator with lateral P-I-N junction formed by Ni-InGaAsP and Zn diffusion on III-V on insulator wafer

MRS Advances ◽  
2016 ◽  
Vol 1 (48) ◽  
pp. 3295-3300 ◽  
Author(s):  
Jin-Kwon Park ◽  
Jae-Hoon Han ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Current Density ◽  
Direct Reaction ◽  
Carrier Injection ◽  
Zn Diffusion ◽  
Optical Attenuation ◽  
Variable Optical Attenuator ◽  
Low Temperature Process ◽  
Injection Current Density

ABSTRACTIn this study, we successfully demonstrate a carrier-injection InGaAsP variable optical attenuator (VOA) with a lateral P-I-N junction formed by Ni-InGaAsP alloy and Zn diffusion on a III-V on insulator (III-V-OI) wafer. The Ni-InGaAsP alloy for the n+ junction is formed by direct reaction between Ni and InGaAsP after annealing at 350°C. The p+ junction is formed by the Zn diffusion at 500°C using Zn doped spin-on glass (SOG). By both techniques, we successfully reduce the sheet and contact resistivity in the lateral P-I-N junction even with the relatively low-temperature process as compared with the P-I-N junction formed by conventional Si and Be ion implantation. By injecting carriers into the InGaAsP waveguide through the lateral P-I-N junction, we achieve the optical attenuation of -40 dB/mm with an injection current density of 40 mA/mm at a 1.55 μm wavelength.

Open‐tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model

1988 ◽  
Vol 63 (4) ◽  
pp. 1052-1059 ◽  
Author(s):  
S. Reynolds ◽  
D. W. Vook ◽  
J. F. Gibbons
Keyword(s):  
Zn Diffusion ◽  
Open Tube

Impurity-induced disordering of AIGalnAs quantum wells by low temperature Zn diffusion

1996 ◽  
Vol 25 (5) ◽  
pp. 565-569 ◽  
Author(s):  
Kazuhiko Itaya ◽  
Mark J. Mondry ◽  
Philip D. Floyd ◽  
Larry A. Coldren ◽  
James L. Merz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Zn Diffusion

Open-Tube Zn Diffusion Method for InGaAsP/InP Heterojunction Bipolar Transistors

1990 ◽  
Vol 29 (Part 2, No. 2) ◽  
pp. L213-L216 ◽  
Author(s):  
Toshiyuki Ohishi ◽  
Ken-ichi Ohtsuka ◽  
Yuji Abe ◽  
Hiroshi Sugimoto ◽  
Teruhito Matsui
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Diffusion Method ◽  
Zn Diffusion ◽  
Open Tube

A Simple Open‐Tube Zn‐Diffusion Technique for GaAs and AlGaAs

1987 ◽  
Vol 134 (10) ◽  
pp. 2631-2634 ◽  
Author(s):  
A. N. M. Masum Choudhury ◽  
M. Oren ◽  
M. A. Rothman ◽  
S. K. Shastry
Keyword(s):  
Zn Diffusion ◽  
Open Tube ◽  
Diffusion Technique

Fabrication of Low Dark‐Current Planar Photodiodes Using an Open‐Tube Method for Zn Diffusion into InP and In0.53Ga0.47As

1984 ◽  
Vol 131 (7) ◽  
pp. 1687-1688 ◽  
Author(s):  
I. Camlibel ◽  
A. K. Chin ◽  
H. Guggenheim ◽  
S. Singh ◽  
L. G. Van Uitert ◽  
...  
Keyword(s):  
Dark Current ◽  
Zn Diffusion ◽  
Open Tube
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