Germanium Surface Cleaning—An Auger Analysis

1974 ◽  
Vol 121 (2) ◽  
pp. 310 ◽  
Author(s):  
D. A. Kiewit ◽  
I. J. D'Haenens ◽  
J. A. Roth
Keyword(s):  
Surface Cleaning ◽  
Auger Analysis ◽  
Germanium Surface

ChemInform Abstract: GERMANIUM SURFACE CLEANING - AN AUGER ANALYSIS

1974 ◽  
Vol 5 (21) ◽  
pp. no-no
Author(s):  
D. A. KIEWIT ◽  
I. J. D'HAENENS ◽  
J. A. ROTH
Keyword(s):  
Surface Cleaning ◽  
Auger Analysis ◽  
Germanium Surface

Germanium Surface Cleaning with Hydrochloric Acid

2019 ◽  
Vol 3 (7) ◽  
pp. 1191-1196 ◽  
Author(s):  
Jungyup Kim ◽  
Jim McVittie ◽  
Krishna Saraswat ◽  
Yoshio Nishi ◽  
S. Liu ◽  
...  
Keyword(s):  
Hydrochloric Acid ◽  
Surface Cleaning ◽  
Germanium Surface

TEM characterization of silicon epitaxial layer grown on Si-TaS2, eutectic composites

1991 ◽  
Vol 49 ◽  
pp. 802-803
Author(s):  
C.M. Sung ◽  
M. Levinson ◽  
M. Tabasky ◽  
K. Ostreicher ◽  
B.M. Ditchek
Keyword(s):  
Substrate Surface ◽  
Bulk Sample ◽  
Surface Cleaning ◽  
Native Oxide ◽  
Czochralski Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Cleaning Methods ◽  
Field Emission Cathodes

Directionally solidified Si/TaSi2 eutectic composites for the development of electronic devices (e.g. photodiodes and field-emission cathodes) were made using a Czochralski growth technique. High quality epitaxial growth of silicon on the eutectic composite substrates requires a clean silicon substrate surface prior to the growth process. Hence a preepitaxial surface cleaning step is highly desirable. The purpose of this paper is to investigate the effect of surface cleaning methods on the epilayer/substrate interface and the characterization of silicon epilayers grown on Si/TaSi2 substrates by TEM.Wafers were cut normal to the <111> growth axis of the silicon matrix from an approximately 1 cm diameter Si/TaSi2 composite boule. Four pre-treatments were employed to remove native oxide and other contaminants: 1) No treatment, 2) HF only; 3) HC1 only; and 4) both HF and HCl. The cross-sectional specimens for TEM study were prepared by cutting the bulk sample into sheets perpendicular to the TaSi2 fiber axes. The material was then prepared in the usual manner to produce samples having a thickness of 10μm. The final step was ion milling in Ar+ until breakthrough occurred. The TEM samples were then analyzed at 120 keV using the Philips EM400T.

Non-Visible Defect Analysis of OTP Device

2011 ◽  
Author(s):  
C.Q. Chen ◽  
G.B. Ang ◽  
Z.X. Xing ◽  
Y.N. Hua ◽  
Z.Q. Mo ◽  
...  
Keyword(s):  
Trap Center ◽  
Data Retention ◽  
Auger Analysis ◽  
Cross Sectional ◽  
Critical Dimensions ◽  
Charge Trap ◽  
Root Cause ◽  
Transmission Electron ◽  
Electrical Analysis ◽  
Visible Defect

Abstract Several product lots were found to suffer from data retention failures in OTP (one time program) devices. PFA (physical failure analysis) was performed on these devices, but nothing abnormal was observed. Cross-sectional TEM (transmission electron microscopy) revealed no physical defects or abnormal CDs (critical dimensions). In order to isolate the failed layer or location, electrical analysis was conducted. Several electrical simulation experiments, designed to test the data retention properties of OTP devices, were preformed. Meilke's method [1] was also used to differentiate between mobile ion contamination and charge trap centers. Besides Meilke's method, a new electrical analysis method was used to verify the analysis results. The results of our analysis suggests that SiN charge trap centers are the root cause for the data retention failures, and the ratio of Si/N is the key to charge trap center formation. Auger analysis was used to physically check the Si/N ratio of OTP devices. The results support our hypothesis. Subsequent DOE (Design Of Experiment) experiments also confirm our analysis results. Key Words: OTP, data retention, Non-visible defect, AFP, charge trap center, mobile ion.

The Investigation of Fluorine Induced Novel Probe Marker Discoloration

2018 ◽  
Author(s):  
W.F. Hsieh ◽  
Henry Lin ◽  
Vincent Chen ◽  
Irene Ou ◽  
Y.S. Lou
Keyword(s):  
Electric Field ◽  
Dark Field ◽  
Inspection System ◽  
Automated Inspection ◽  
Stress Tests ◽  
Auger Analysis ◽  
Corrosion Film ◽  
Scan Data ◽  
Thickness Variations ◽  
One Year

Abstract This paper describes the investigation of donut-shaped probe marker discolorations found on Al bondpads. Based on SEM/EDS, TEM/EELS, and Auger analysis, the corrosion product is a combination of aluminum, fluorine, and oxygen, implying that the discolorations are due to the presence of fluorine. Highly accelerated stress tests simulating one year of storage in air resulted in no new or worsening discolorations in the affected chips. In order to identify the exact cause of the fluorine-induced corrosion, the authors developed an automated inspection system that scans an entire wafer, recording and quantifying image contrast and brightness variations associated with discolorations. Dark field TEM images reveal thickness variations of up to 5 nm in the corrosion film, and EELS line scan data show the corresponding compositional distributions. The findings indicate that fluorine-containing gases used in upstream processes leave residues behind that are driven in to the Al bondpads by probe-tip forces and activated by the electric field generated during CP testing. The knowledge acquired has proven helpful in managing the problem.

Studies and Application of Auger Monitoring System for Quality Control and Assurance of Al Bondpads

2016 ◽  
Author(s):  
Hua Younan
Keyword(s):  
Quality Control ◽  
Sample Preparation ◽  
Monitoring System ◽  
Failure Mechanisms ◽  
Wafer Fabrication ◽  
Contamination Level ◽  
Auger Analysis ◽  
Low Level ◽  
Monitoring Frequency ◽  
Control Procedures

Abstract In wafer fabrication (Fab), Fluorine (F) based gases are used for Al bondpad opening process. Thus, even on a regular Al bondpad, there exists a low level of F contamination. However, the F level has to be controlled at a lower level. If the F level is higher than the control/spec limits, it could cause F-induced corrosion and Al-F defects, resulting in pad discoloration and NSOP problems. In our previous studies [1-5], the theories, characteristics, chemical and physical failure mechanisms and the root causes of the F-induced corrosion and Al-F defects on Al bondpads have been studied. In this paper, we further study F-induced corrosion and propose to establish an Auger monitoring system so as to monitor the F contamination level on Al bondpads in wafer fabrication. Auger monitoring frequency, sample preparation, wafer life, Auger analysis points, control/spec limits and OOC/OOS quality control procedures are also discussed.

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