The Effect of Surface Cleaning on Current Collapse in AlGaN/GaN HEMTs

2019 ◽  
Vol 3 (5) ◽  
pp. 373-379
Author(s):  
J. Bardwell ◽  
Soufien Haffouz ◽  
Ross McKinnon ◽  
Craig Storey ◽  
Haipeng Tang ◽  
...  
Keyword(s):  
Surface Cleaning ◽  
Current Collapse ◽  
Gan Hemts ◽  
Effect Of Surface

The Effect of Surface Cleaning on Current Collapse in AlGaN∕GaN HEMTs

2007 ◽  
Vol 10 (2) ◽  
pp. H46 ◽  
Author(s):  
J. A. Bardwell ◽  
S. Haffouz ◽  
W. R. McKinnon ◽  
C. Storey ◽  
H. Tang ◽  
...  
Keyword(s):  
Surface Cleaning ◽  
Current Collapse ◽  
Gan Hemts ◽  
Effect Of Surface

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

2002 ◽  
Vol 194 (2) ◽  
pp. 447-451 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa
Keyword(s):  
Current Collapse ◽  
Gan Hemts

Effect of Surface Cleaning on Laser Texturing of Multicrystalline Silicon Wafer

2018 ◽  
Vol 10 (5) ◽  
pp. 690-693
Author(s):  
Hee Soo Kim ◽  
Seung Hyun Ha ◽  
Sang Joon Park ◽  
Ji Hyeon Kim
Keyword(s):  
Silicon Wafer ◽  
Surface Cleaning ◽  
Multicrystalline Silicon ◽  
Laser Texturing ◽  
Effect Of Surface

A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

2003 ◽  
Vol 50 (10) ◽  
pp. 2015-2020 ◽  
Author(s):  
T. Mizutani ◽  
Y. Ohno ◽  
M. Akita ◽  
S. Kishimoto ◽  
K. Maezawa
Keyword(s):  
Bias Stress ◽  
Current Collapse ◽  
Gan Hemts

Recent Reliability Progress of GaN HEMT Power Amplifiers

2012 ◽  
Vol 1432 ◽  
Author(s):  
Toshihiro Ohki ◽  
Masahito Kanamura ◽  
Yoichi Kamada ◽  
Kozo Makiyama ◽  
Yusuke Inoue ◽  
...  
Keyword(s):  
High Efficiency ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Device Structure ◽  
Passivation Film ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Specific Device ◽  
Gan Hemts ◽  
A Current

ABSTRACTIn this paper, we describe highly reliable GaN high electron mobility transistors (HEMTs) for high-power and high-efficiency amplifiers. First, we present the reliability mechanisms and progress on the previously reported GaN HEMTs. Next, we introduce our specific device structure of GaN HEMTs for improving reliability. An n-GaN cap and optimized buffer layer were used to suppress the trap-related phenomena, such as a current collapse. Gate edge oxidation is effective for reducing the gate leakage current. A Ta-based barrier metal was inserted between an ohmic electrode and interconnection metal for preventing increase in contact resistance. SiN of passivation film was optimized for reducing the current collapse of short-gatelength HEMTs.

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