Formation of HgCdTe by Electrochemical Atomic Layer Epitaxy (EC-ALE)

2019 ◽  
Vol 3 (5) ◽  
pp. 95-110 ◽  
Author(s):  
Venkatram Venkatasamy ◽  
Nagarajan Jayaraju
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Electrochemical Atomic Layer Epitaxy

Electrochemical Atomic-Layer Epitaxy: Electrodeposition of III-V and II-VI Compound Semiconductors

1999 ◽  
Vol 581 ◽  
Author(s):  
Travis L. Wade ◽  
Billy H. Flowers ◽  
Raman Vaidyanathan ◽  
Kenneth Mathe ◽  
Clinton B. Maddox ◽  
...  
Keyword(s):  
Compound Semiconductors ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Infrared Reflection ◽  
Epitaxial Deposition ◽  
Electrochemical Atomic Layer Epitaxy

ABSTRACTElectrochemical atomic-layer epitaxy (EC-ALE) is an approach to electrodepositing thin-films of compound semiconductors. It takes advantage of underpotential deposition (UPD), deposition of a surface limited amount (a monolayer or less) of an element at a potential less negative than bulk deposition, to form a thin-film of a compound--one atomic layer at a time. Ideally, the 2-D growth mode should promote epitaxial deposition.Many II-VI and a few III-V compounds have been formed by EC-ALE. TI-VI films such as CdSe, CdS, and CdTe have been successfully formed. In addition, deposition of III-V compounds of InAs and InSb are being explored, along with initial studies of GaAs deposition. Depositions of the I-VI systems are better understood so this report will focus on the III-V's, particularly InAs and InSb.Building compounds an atomic layer at a time lends electrochemical-ALE to nanoscale technology. Deposited thickness ranged from a few nanometers to a few hundred. The films are typically characterized by atomic-force microscopy (AFM), X-ray diffraction (XRD), electron microprobe analysis (EPMA) and ellipsometry. InAs deposits are also characterized by infrared reflection absorption.

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