A Study of Boron Implantation into High Ge Content SiGe Alloys

2019 ◽  
Vol 3 (7) ◽  
pp. 667-676 ◽  
Author(s):  
Robert Wittmann ◽  
Suresh Uppal ◽  
Andreas Hoessinger ◽  
Johann Cervenka ◽  
Siegfried Selberherr
Keyword(s):  
Boron Implantation

Reality of doping by boron implantation of CVD polycrystalline diamond from a comparison of Raman and electrical measurements

1994 ◽  
Vol 3 (4-6) ◽  
pp. 623-627 ◽  
Author(s):  
F. Fontaine ◽  
A. Deneuville ◽  
E. Gheeraert ◽  
P. Gonon ◽  
L. Abello ◽  
...  
Keyword(s):  
Polycrystalline Diamond ◽  
Electrical Measurements ◽  
Boron Implantation

Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation

2004 ◽  
Vol 457-460 ◽  
pp. 925-928 ◽  
Author(s):  
Konstantin Vassilevski ◽  
J. Hedley ◽  
Alton B. Horsfall ◽  
C. Mark Johnson ◽  
Nicolas G. Wright
Keyword(s):  
Silicon Carbide ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Boron Implantation

Efficiency improvement of Si quantum dot solar cells by activation with boron implantation

Solar Energy ◽  
2018 ◽  
Vol 164 ◽  
pp. 89-93 ◽  
Author(s):  
Gyea Young Kwak ◽  
Tae Gun Kim ◽  
Songwoung Hong ◽  
Ansoon Kim ◽  
Man Hyo Ha ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Efficiency Improvement ◽  
Si Quantum Dot ◽  
Quantum Dot Solar Cells ◽  
Boron Implantation

High-dose boron implantation and RTP anneal of polysilicon films for shallow junction diffusion sources and interconnects

1991 ◽  
Author(s):  
Bruha Raicu ◽  
W. A. Keenan ◽  
Michael I. Current ◽  
David Mordo ◽  
Roger Brennan
Keyword(s):  
High Dose ◽  
Shallow Junction ◽  
Boron Implantation ◽  
Polysilicon Films

Features of Semiconductors during Nanoindentation

2003 ◽  
Vol 779 ◽  
Author(s):  
Asta Richter ◽  
Bodo Wolf ◽  
Roger Smith ◽  
Margita Günther
Keyword(s):  
Phase Transformation ◽  
Hysteresis Loops ◽  
Maximum Load ◽  
Depth Sensing ◽  
Ion Energy ◽  
Loop Area ◽  
Area Reduction ◽  
Boron Implantation ◽  
The Impact ◽  
Constant Maximum

AbstractSi and InSb were subject to depth sensing multi-cycling nanoindentation. The load-depthcurves exhibited hysteresis loops which are explained in terms of pressure induced phase transformations. In order to study the impact of crystal distortions on phase transformation, the specimens were subject to boron implantation (ion energy 180 keV) of different implantation doses (1014 to 1017 ions/cm2) and indented without annealing. In InSb, the hysteresis loops disappeared after implantation of 1016 ions/cm2, and for Si with its stronger bonds, a dose of 3*1016/cm2 is required for the same effect. Indentation cycling with constant maximum load results in a sudden disappearance of the hysteresis loop after a small gradual loop area reduction during the first initial cycles.

The role of the substrate in the high energy boron implantation damage recovering

2009 ◽  
Vol 159-160 ◽  
pp. 168-172
Author(s):  
I. Mica ◽  
L. Di Piazza ◽  
L. Laurin ◽  
M. Mariani ◽  
A.G. Mauri ◽  
...  
Keyword(s):  
High Energy ◽  
Implantation Damage ◽  
Boron Implantation

Defects Introduced into Silicon by Boron Implantation in the MeV Energy Range

1977 ◽  
pp. 65-75
Author(s):  
J. C. Muller ◽  
R. Stuck ◽  
P. Siffert ◽  
S. Kalbitzer
Keyword(s):  
Energy Range ◽  
Boron Implantation
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