Effectiveness of Si Seed for Selective SiGe Epitaxial Deposition in Recessed Source and Drain for Locally Strained pMOS Application

2019 ◽  
Vol 3 (7) ◽  
pp. 245-248
Author(s):  
Po Lun Cheng ◽  
Chin I Liao ◽  
Hou Ren Wu ◽  
Yi Cheng Chen ◽  
Chin Cheng Chien ◽  
...  
Keyword(s):  
1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.


Nanoscale ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 5402-5411 ◽  
Author(s):  
Min Xi ◽  
Björn M. Reinhard

The effect of composition and tip morphology on the far-field optical response of Ag–Au–Ag nanorods with Au bipyramid core is quantified, and the near-field associated with standing plasmon waves in nanorods on silicon substrates is investigated.


2003 ◽  
Vol 384 (4) ◽  
pp. 475-481 ◽  
Author(s):  
D.Q. Shi ◽  
M. Ionescu ◽  
T.M. Silver ◽  
S.X. Dou

1974 ◽  
Vol 13 (S1) ◽  
pp. 613 ◽  
Author(s):  
Shin Kosaka ◽  
Yutaka Onodera

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