Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing
1989 ◽
Vol 47
◽
pp. 604-605
2003 ◽
Vol 386
◽
pp. 358-362
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1970 ◽
Vol 32
(6)
◽
pp. 1791-1797