Gd silicate: A high-k dielectric compatible with high temperature annealing

2009 ◽  
Vol 27 (1) ◽  
pp. 249 ◽  
Author(s):  
H. D. B. Gottlob ◽  
A. Stefani ◽  
M. Schmidt ◽  
M. C. Lemme ◽  
H. Kurz ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
High K ◽  
High K Dielectric

Profiling Different Kinds of Generated Defects at Elevated Temperature in Both SiO2 and High-k Dielectrics

2010 ◽  
Vol 1252 ◽  
Author(s):  
Sahar Sahhaf ◽  
Robin Degraeve ◽  
Mohammed Zahid ◽  
Guido Groeseneken
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Low Temperature ◽  
Leakage Current ◽  
Charge Injection ◽  
Constant Voltage ◽  
High K ◽  
Voltage Stress ◽  
Stress Induced Leakage Current ◽  
High K Dielectric

AbstractIn this work, the effect of elevated temperature on the generated defects with constant voltage stress (CVS) in SiO2 and SiO2/HfSiO stacks is investigated. Applying Trap Spectroscopy by Charge Injection and Sensing (TSCIS) to 6.5 nm SiO2 layers, different kinds of generated traps are profiled at low and high temperature. Also the Stress-Induced Leakage Current (SILC) spectrum of high-k dielectric stack is different at elevated temperature indicating that degradation and breakdown at high temperature is not equivalent to that at low temperature and therefore, extrapolation of data from high to low T or vice versa is challenging.

Discriminating High k Dielectric Gas Sensors

2014 ◽  
Vol 778-780 ◽  
pp. 1058-1062 ◽  
Author(s):  
Sandip K. Roy ◽  
Konstantin V. Vassilevski ◽  
Christopher J. O'Malley ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
High Temperature ◽  
Gas Sensors ◽  
Chemical Characteristics ◽  
Extreme Conditions ◽  
Dielectric Layers ◽  
High K ◽  
Flatband Voltage ◽  
High K Dielectric ◽  
Mis Capacitors ◽  
High Temperature Gas

High temperature gas sensors for the detection of harmful gases under extreme conditions have been demonstrated. Here, we show the detection and selective response of two SiC based MIS sensor structures with HfO2and TiO2high κ dielectric layers to two different hydrogen containing gases. The structures utilise a Pt catalytic gate contact and a high-κ dielectric that was grown on a thin SiO2layer, which was thermally grown on the Si face of epitaxial 4H SiC. The chemical characteristics of MIS capacitors have been studied in N2, O2, H2and CH4ambients at 573K. The data show a positive flatband voltage shift for oxygen and methane with respect to the nitrogen baseline, whilst hydrogen shows a negative shift. The response for the TiO2based sensor is significantly larger than that of the HfO2based device for hydrogen, enabling discrimination of gases within a mixture.

Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics

2013 ◽  
Vol 740-742 ◽  
pp. 837-840
Author(s):  
Benjamin J.D. Furnival ◽  
Sandip K. Roy ◽  
Nicolas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
High Temperature ◽  
Temperature Dependence ◽  
High Temperatures ◽  
Epitaxial Layer ◽  
Electrical Characteristics ◽  
Temperature Characteristics ◽  
High K ◽  
High K Dielectric ◽  
Increasing Temperature ◽  
Mis Capacitors

In this work SiC-based MIS capacitors have been fabricated with different contact/high-k dielectric combinations and the temperature dependence of the characteristics have been examined in an N2ambient at temperatures between 323K and 673K. The structures utilise either a Pt or Pd catalytic gate contact and a TiO2or HfO2high-k dielectric, all of which are grown on a thin SiO2layer, thermally grown on the Si face of a 4H SiC epitaxial layer. The MIS capacitors have been studied in an N2 ambient between 323K and 673K and observations show that VFBreduces with increasing temperature. The majority of this variation is caused a reduction in the Ditinfluencing the structures electrical characteristics, due to a shift in the semiconductors bulk potential, which is due to the lower VTHof SiC-based MOSFETs at high temperatures.

Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes

2019 ◽  
Vol 3 (3) ◽  
pp. 159-170 ◽  
Author(s):  
Thierry Conard ◽  
Tom Schram ◽  
Amal Akheyar ◽  
Kai Arstila ◽  
Gerd Zschaetzsch ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
High K

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

FERROPERM

Alloy Digest ◽  
1993 ◽  
Vol 42 (4) ◽  
Keyword(s):  
Fracture Toughness ◽  
High Temperature ◽  
Physical Properties ◽  
Saturation Magnetization ◽  
Pure Iron ◽  
Magnetic Alloy ◽  
High Saturation Magnetization ◽  
High Temperature Annealing ◽  
Soft Magnetic ◽  
Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

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