scholarly journals Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition

2006 ◽  
Vol 153 (11) ◽  
pp. G956 ◽  
Author(s):  
S. B. S. Heil ◽  
E. Langereis ◽  
F. Roozeboom ◽  
M. C. M. van de Sanden ◽  
W. M. M. Kessels
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Low Temperature Deposition ◽  
Layer Deposition ◽  
Temperature Deposition

Low temperature deposition of 2D WS2 layers from WF6 and H2S precursors: impact of reducing agents

2015 ◽  
Vol 51 (86) ◽  
pp. 15692-15695 ◽  
Author(s):  
A. Delabie ◽  
M. Caymax ◽  
B. Groven ◽  
M. Heyne ◽  
K. Haesevoets ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Reducing Agents ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
The Impact

We demonstrate the impact of reducing agents for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) of WS2 from WF6 and H2S precursors.

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

scholarly journals Epitaxial GaN using Ga(NMe2)3 and NH3 Plasma by Atomic Layer Deposition

2020 ◽  
Author(s):  
Polla Rouf ◽  
Nathan J O'Brien ◽  
Sydney C. Buttera ◽  
Ivan Martinovic ◽  
Babak Bakhit ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Low Carbon ◽  
Layer Deposition ◽  
Temperature Deposition ◽  
Aln Buffer ◽  
Oxygen Impurities

<div>Low temperature deposition of high-quality epitaxial GaN is crucial for its integration in</div><div>electronic applications. Chemical vapor deposition at approximately 800 °C using SiC with an</div><div>AlN buffer layer or nitridized sapphire as substrates is used to facilitate the GaN growth. Here,</div><div>we present a low temperature atomic layer deposition (ALD) process using</div><div>tris(dimethylamido)gallium(III) with NH3 plasma. The ALD process shows self-limiting</div><div>behaviour between 130-250 °C with a growth rate of 1.4 Å/cycle. The GaN films produced were</div><div>crystalline on Si(100) at all deposition temperatures with a near stochiometric Ga/N ratio with</div><div>low carbon and oxygen impurities. When GaN was deposited on 4H-SiC, the films grew</div><div>epitaxially without the need for an AlN buffer layer, which has never been reported before. The bandgap of the GaN films was measured to be ~3.42 eV and the fermi level showed that the GaN was unintentionally n-type doped. This study shows the potential of ALD for GaN-based</div><div>electronic devices.</div>

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