Characterization of Plasma‐Enhanced Chemical Vapor Deposited Nitride Films Used in Very Large Scale Integrated Applications

1993 ◽  
Vol 140 (6) ◽  
pp. 1748-1752 ◽  
Author(s):  
A. K. Stamper ◽  
S. L. Pennington
Keyword(s):  
Large Scale ◽  
Chemical Vapor ◽  
Chemical Vapor Deposited

scholarly journals Influence of plasma treatment on SiO2/Si and Si3N4/Si substrates for large-scale transfer of graphene

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
R. Lukose ◽  
M. Lisker ◽  
F. Akhtar ◽  
M. Fraschke ◽  
T. Grabolla ◽  
...  
Keyword(s):  
Large Scale ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Limiting Factors ◽  
Adhesion Properties ◽  
Si Substrates ◽  
Wetting Contact Angle ◽  
Angle Measurements ◽  
Chemical Vapor Deposited ◽  
Contact Angle Measurements

AbstractOne of the limiting factors of graphene integration into electronic, photonic, or sensing devices is the unavailability of large-scale graphene directly grown on the isolators. Therefore, it is necessary to transfer graphene from the donor growth wafers onto the isolating target wafers. In the present research, graphene was transferred from the chemical vapor deposited 200 mm Germanium/Silicon (Ge/Si) wafers onto isolating (SiO2/Si and Si3N4/Si) wafers by electrochemical delamination procedure, employing poly(methylmethacrylate) as an intermediate support layer. In order to influence the adhesion properties of graphene, the wettability properties of the target substrates were investigated in this study. To increase the adhesion of the graphene on the isolating surfaces, they were pre-treated with oxygen plasma prior the transfer process of graphene. The wetting contact angle measurements revealed the increase of the hydrophilicity after surface interaction with oxygen plasma, leading to improved adhesion of the graphene on 200 mm target wafers and possible proof-of-concept development of graphene-based devices in standard Si technologies.

Effect of low-frequency radio frequency on plasma-enhanced chemical vapor deposited ultra low-κ dielectric films for very large-scale integrated interconnects

2014 ◽  
Vol 115 (14) ◽  
pp. 144107 ◽  
Author(s):  
E. Todd Ryan ◽  
Stephen M. Gates ◽  
Stephan A. Cohen ◽  
Yuri Ostrovski ◽  
Ed Adams ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Large Scale ◽  
Low Frequency ◽  
Chemical Vapor ◽  
Dielectric Films ◽  
Chemical Vapor Deposited

Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

2011 ◽  
Vol 485 ◽  
pp. 133-136 ◽  
Author(s):  
Ryoichi Saotome ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Jeffrey S. Cross ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Electrochemical Impedance ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

2013 ◽  
Vol 16 (1) ◽  
pp. 126-130 ◽  
Author(s):  
Kyu-Hwan Shim ◽  
Hyeon Deok Yang ◽  
Yeon-Ho Kil ◽  
Jong-Han Yang ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Reduced Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Characterization of High Quality, Large-Scale Growth of Monolayer WS2 Domains via Chemical Vapor Deposition Technique

2021 ◽  
Author(s):  
Somayeh Asgary ◽  
Amir Hoshang Ramezani ◽  
Zhaleh Ebrahimi Nejad
Keyword(s):  
Large Scale ◽  
Average Length ◽  
Chemical Vapor ◽  
Growth Time ◽  
High Quality ◽  
Force Microscopy ◽  
Atomic Force ◽  
Regular Triangle ◽  
Vapor Deposition Technique

Abstract WS2 flakes have been grown successfully on SiO2 substrate via chemical vapor (CVD) deposition method by reduction and sulfurization of WO3 using Ar/ H2 gas and sulfur evaporated from solid sulfur powder. The prepared samples were characterized by optical microscopy (OM), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman spectra and photoluminescence (PL). Large domain WS2 monolayers are obtained by extending the growth time. The perfect triangular single-crystalline WS2 flakes with an average length of more than 35 µm were achieved. The sharp PL peak (∼1.98 eV) and two distinct Raman peaks (E2g and A1g) with a ∼ 71.5 cm-1 peak split indicating that relatively high quality WS2 crystals with a regular triangle shape can be synthesized. Higher growth time shows larger triangular-shaped of WS2.

Fabrication and characterization of microwave-plasma-assisted chemical-vapor-deposited dielectric coatings

1991 ◽  
Author(s):  
Roger M. Wood ◽  
Adrian C. Greenham ◽  
Bruce A. Nichols ◽  
Noorallah Nourshargh ◽  
Keith L. Lewis
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Dielectric Coatings ◽  
Chemical Vapor Deposited ◽  
Fabrication And Characterization
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