Annealing of Low Pressure Chemical Vapor Deposited Phosphorus Glass Films‐Effect on Electrical Properties and Concentrations of Hydrogen Containing Species

S. C. Li; S. P. Murarka; X. S. Guo; W. A. Lanford

doi:10.1149/1.2221271

Annealing of Low Pressure Chemical Vapor Deposited Phosphorus Glass Films‐Effect on Electrical Properties and Concentrations of Hydrogen Containing Species

Journal of The Electrochemical Society ◽

10.1149/1.2221271 ◽

1992 ◽

Vol 139 (9) ◽

pp. 2599-2604 ◽

Cited By ~ 1

Author(s):

S. C. Li ◽

S. P. Murarka ◽

X. S. Guo ◽

W. A. Lanford

Keyword(s):

Electrical Properties ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Glass Films

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Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C

Journal of Applied Physics ◽

10.1063/1.3078027 ◽

2009 ◽

Vol 105 (3) ◽

pp. 033714 ◽

Cited By ~ 13

Author(s):

R. M. Tiggelaar ◽

A. W. Groenland ◽

R. G. P. Sanders ◽

J. G. E. Gardeniers

Keyword(s):

Thin Films ◽

Silicon Nitride ◽

Electrical Properties ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Electrical Properties of Rapid Thermal-Enhanced Low Pressure Chemical Vapor Deposited Ta[sub 2]O[sub 5] Thin Films

Electrochemical and Solid-State Letters ◽

10.1149/1.1390760 ◽

1999 ◽

Vol 2 (3) ◽

pp. 135 ◽

Cited By ~ 3

Author(s):

Chiao-Ju Lee

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Electrical Properties of 10-50 nm TEOS (Tetraethoxysilane) LPCVD (Low Pressure Chemical Vapor Deposition) Films.

10.21236/ada146416 ◽

1984 ◽

Author(s):

R. H. Vogel ◽

S. R. Butler ◽

F. J. Feigl

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Applied Surface Science ◽

10.1016/j.apsusc.2020.148530 ◽

2021 ◽

Vol 542 ◽

pp. 148530

Author(s):

Kexin Deng ◽

Xinhua Wang ◽

Sen Huang ◽

Haibo Yin ◽

Jie Fan ◽

...

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Electrical properties of W delta doped Si epitaxial films grown on Si(100) by ultraclean low-pressure chemical vapor deposition

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2004.09.025 ◽

2005 ◽

Vol 8 (1-3) ◽

pp. 125-129 ◽

Cited By ~ 1

Author(s):

Takehisa Kurosawa ◽

Tomoyuki Komatsu ◽

Masao Sakuraba ◽

Junichi Murota

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Epitaxial Films ◽

Pressure Chemical

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ChemInform Abstract: Rapid Thermal Annealed Low Pressure Chemical-Vapor-Deposited SiO2 as Gate Dielectric in Silicon MOSFET′s.

ChemInform ◽

10.1002/chin.198736362 ◽

1987 ◽

Vol 18 (36) ◽

Author(s):

S. ANG ◽

S. WILSON

Keyword(s):

Gate Dielectric ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Low pressure chemical vapor deposition of oxide from SiH4/O2: Chemistry and effects on electrical properties

Applied Physics Letters ◽

10.1063/1.106962 ◽

1992 ◽

Vol 60 (2) ◽

pp. 198-200 ◽

Cited By ~ 26

Author(s):

M. Liehr ◽

S. A. Cohen

Keyword(s):

Chemical Vapor Deposition ◽

Electrical Properties ◽

Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Pressure Chemical

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Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

Applied Physics Letters ◽

10.1063/1.93714 ◽

1982 ◽

Vol 41 (9) ◽

pp. 844-846 ◽

Cited By ~ 7

Author(s):

H. L. Hwang ◽

C. C. Hwu ◽

J. C. Liue ◽

H. H. Lin

Keyword(s):

Silicon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Chemical Vapor ◽

Low Pressure ◽

Rutherford Backscattering ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs

10.1117/12.941044 ◽

1987 ◽

Author(s):

Min-Shyong Lin ◽

Hen-Chang Chou

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Tungsten Silicide ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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