Electrical Properties of Rapid Thermal-Enhanced Low Pressure Chemical Vapor Deposited Ta[sub 2]O[sub 5] Thin Films

1999 ◽  
Vol 2 (3) ◽  
pp. 135 ◽  
Author(s):  
Chiao-Ju Lee
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

scholarly journals Formation of silicon nanocrystals by thermal annealing of low-pressure chemical-vapor deposited amorphous SiNx (x=0.16) thin films

2013 ◽  
Vol 16 (6) ◽  
pp. 1849-1852 ◽  
Author(s):  
Hakim Haoues ◽  
Hachemi Bouridah ◽  
Mahmoud Riad Beghoul ◽  
Farida Mansour ◽  
Riad Remmouche ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Silicon Nanocrystals ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Physical and Electrical Properties of Tantalum Oxide Thin Films Deposited by Low Pressure Chemical Vapor Deposition

1992 ◽  
Vol 284 ◽  
Author(s):  
William R. Hitchens ◽  
Wilbur C. Krusell ◽  
Daniel M. Dobkin
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Tantalum Oxide ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Oxide Thin Films ◽  
Pressure Chemical

ABSTRACTTa2O5 films suitable for DRAM use have been deposited on silicon, polysilicon, and SiO2 by LP-CVD from Ta (OC2H5)5 and O2. Uniformity, reproducibility, and conformality are excellent. Annealed films are polycrystalline, and their surfaces are characterized by 2 nm high, 1 mgr;m diameter nucleation centers surrounded by circular crystallization fronts. The electrical properties of annealed films are dominated by a SiO2-rich layer which forms between the Ta2O5 and the silicon or polysilicon substrate.

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