ArF Excimer Laser‐Enhanced Photochemical Vapor Deposition of Homoepitaxial Silicon from Disilane

1992 ◽  
Vol 139 (8) ◽  
pp. 2314-2318 ◽  
Author(s):  
B. Fowler ◽  
S. Lian ◽  
S. Krishnan ◽  
L. Jung ◽  
C. Li ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Vapor Deposition ◽  
Arf Excimer Laser ◽  
Photochemical Vapor Deposition

Modeling of photochemical vapor deposition of epitaxial silicon using an ArF excimer laser

1991 ◽  
Author(s):  
Burt W. Fowler ◽  
Sean Lian ◽  
S. Krishnan ◽  
Le-Tien Jung ◽  
Chien-Yen Li ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Vapor Deposition ◽  
Epitaxial Silicon ◽  
Arf Excimer Laser ◽  
Photochemical Vapor Deposition

Laser Induced Photochemical Vapor Deposition of Tungsten on Silicon

1989 ◽  
Vol 168 ◽  
Author(s):  
A. J. P. van Maaren ◽  
W. C. Sinke
Keyword(s):  
Laser Pulse ◽  
Substrate Temperature ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Pulse Frequency ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Photochemical Vapor Deposition

AbstractAn ArF excimer laser (193 nm) aligned parallel to the substrate has been used to initiate photo-activation of the W-CVD process. W was deposited on silicon and SIMOX at a 310 °C substrate temperature using WF6 as a W precursor, together with H2. The samples were analyzed after deposition with SEM and 2 MeV He+ RBS, to obtain information about the reaction between WF6 and Si in laser-induced CVD of W. The data indicate that the reaction between WF6 and Si is suppressed upon laser irradiation. The suppression increases with increasing laser-pulse frequency. An explanation for this phenomenon is given in terms of atomic Hformation after (partial) photodissociation of WF6.

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