Dielectric Strength of Thin Oxide Grown Thermally Using Thin Amorphous Silicon

1993 ◽  
Vol 140 (11) ◽  
pp. 3210-3215 ◽  
Author(s):  
Manabu Itsumi ◽  
Kenji Kishi
Keyword(s):  
Amorphous Silicon ◽  
Dielectric Strength ◽  
Thin Oxide

Thin‐Oxide Dielectric Strength Improvement by Adding a Phosphonic Acid Chelating Agent into  NH 4 OH  ‐  H 2 O 2 Solution

1994 ◽  
Vol 141 (10) ◽  
pp. L139-L142 ◽  
Author(s):  
Hideo Akiya ◽  
Shuji Kuwano ◽  
Tohru Matsumoto ◽  
Hisashi Muraoka ◽  
Manabu Itsumi ◽  
...  
Keyword(s):  
Phosphonic Acid ◽  
Chelating Agent ◽  
Dielectric Strength ◽  
Thin Oxide ◽  
Strength Improvement

Machine learning reveals the complexity of dense amorphous silicon

Nature ◽  
2021 ◽  
Vol 589 (7840) ◽  
pp. 22-23
Author(s):  
Paul F. McMillan
Keyword(s):  
Machine Learning ◽  
Amorphous Silicon

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-663-C4-666
Author(s):  
X. B. Liao ◽  
G. L. Kong ◽  
X. R. Yang ◽  
P. D. Wang ◽  
Y. Q. Chao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon

RAMAN SCATTERING IN ANNEAL STABLE AMORPHOUS SILICON

1981 ◽  
Vol 42 (C6) ◽  
pp. C6-54-C6-56 ◽  
Author(s):  
S. T. Kshirsagar ◽  
J. S. Lannin
Keyword(s):  
Raman Scattering ◽  
Amorphous Silicon
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