Resolution of Silicon Wafer Temperature Measurement by In Situ Ellipsometry in a Rapid Thermal Processor

1993 ◽  
Vol 140 (9) ◽  
pp. 2673-2678 ◽  
Author(s):  
Ronald K. Sampson ◽  
Hisham Z. Massoud
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Wafer Temperature

scholarly journals In-situ wafer temperature measurement during firing process via inline infrared thermography

2019 ◽  
Author(s):  
Daniel Ourinson ◽  
Gernot Emanuel ◽  
Attila Csordás ◽  
Gunnar Dammaß ◽  
Harald Müller ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Infrared Thermography ◽  
Firing Process ◽  
Wafer Temperature

New Reliable Structure for High Temperature Measurement of Silicon Wafers Using a Specially Attached Thermocouple

1983 ◽  
Vol 23 ◽  
Author(s):  
S.A. Cohen ◽  
T.O. Sedgwick ◽  
J.L. Speidell
Keyword(s):  
Material Processing ◽  
High Temperature ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Temperature Measurements ◽  
Wafer Temperature ◽  
High Temperature Measurement ◽  
Short Time ◽  
Repeated Cycling

ABSTRACTAccurate wafer temperature measurement is very important in the area of material processing. In Short Time Annealing, for example, it is necessary to monitor temperature peaks of up to 1200°C which are only a few seconds in duration. This paper describes a structure consisting of a silicon wafer with a specially attached thermocouple. This structure is capable of reliable high temperature measurements of up to 1200°C and is also capable of surviving repeated cycling at that temperature.

Temperature Measurement of Metallized Silicon Wafers by Infrared Transmission Using Single- and Double-Pass Geometries

1994 ◽  
Vol 342 ◽  
Author(s):  
C.W. Cullen ◽  
J.C. Sturm
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Silicon Wafers ◽  
Infrared Transmission ◽  
Double Pass ◽  
Wafer Temperature ◽  
Single Pass ◽  
Transmission Technique

ABSTRACTThe infrared transmission technique for the measurement of silicon wafer temperature has been extended to metallized wafers. For wafers with partial metal coverage, a single-pass method has been demonstrated from 200°C to 550°C. For wafers with blanket metal coverage, a novel double-pass infrared transmission technique is presented.

Wavelength Considerations for Improved Silicon Wafer Temperature Measurement by Ellipsometry

1994 ◽  
Vol 141 (2) ◽  
pp. 539-542 ◽  
Author(s):  
R. K. Sampson ◽  
K. A. Conrad ◽  
H. Z. Massoud ◽  
E. A. Irene
Keyword(s):  
Temperature Measurement ◽  
Silicon Wafer ◽  
Wafer Temperature

Optimization of the Ast Hot Liner™ for Sub-Micron Production

1997 ◽  
Vol 470 ◽  
Author(s):  
Terrence J. Riley ◽  
Rolf Bremensdorfer ◽  
Steve Marcus
Keyword(s):  
Steady State ◽  
Silicon Nitride ◽  
Temperature Measurement ◽  
Silicon Wafer ◽  
Measurement Technique ◽  
Optimization Process ◽  
Temperature Uniformity ◽  
Wafer Temperature ◽  
Process Uniformity ◽  
Temperature Measurement Technique

ABSTRACTIn an effort to develop an emissivity independent temperature measurement technique for the AST Rapid Thermal Processor (RTP), AST has conceived of the Hot Liner™. The Hot Liner is a silicon nitride coated silicon wafer which is permanently installed in the process chamber, immediately below the wafer. The pyrometer, which is calibrated to a production wafer, views the constant emissivity Hot Liner to produce repeatable temperatures on product wafers regardless of their backside emissivity.Given the repeatability of the Hot Liner, the wafer temperature uniformity must then be optimized in order to achieve 0.25μm capable processing. AST has developed a methodology which incorporates process monitors (ion implanted test wafers) to establish process uniformity in addition to multiple thermocouple wafers to verify across wafer temperature uniformity. The process monitors are used to separately optimize the ramp and steady state steps in the production recipe.Utilizing the AST methodology to optimize processing with the Hot Liner has allowed AMD to significantly improve its RTA processing. The Hot Liner greatly decreases backside and pyrometer effects which yields limited wafer to wafer variation (< 5C, 3σ). In combination with the optimization process this results in excellent within wafer uniformity (< 3C, 3σ).

scholarly journals In Situ Solar Wafer Temperature Measurement during Firing Process via Inline IR Thermography

2019 ◽  
Vol 13 (10) ◽  
pp. 1900270 ◽  
Author(s):  
Daniel Ourinson ◽  
Gernot Emanuel ◽  
Attila Csordás ◽  
Gunnar Dammaß ◽  
Harald Müller ◽  
...  
Keyword(s):  
Temperature Measurement ◽  
Firing Process ◽  
Ir Thermography ◽  
Wafer Temperature
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