Measurement of Reduced Surface Barrier Height in Sulfur Passivated InP and GaAs Using Raman Spectroscopy

1993 ◽  
Vol 140 (7) ◽  
pp. 2085-2088 ◽  
Author(s):  
X. Chen ◽  
X. Si ◽  
V. Malhotra
Keyword(s):  
Raman Spectroscopy ◽  
Barrier Height ◽  
Surface Barrier ◽  
Reduced Surface

Surface barrier height in metal-n-6H-SiC structures

1995 ◽  
Vol 29 (1-3) ◽  
pp. 198-201 ◽  
Author(s):  
A.L. Syrkin ◽  
A.N. Andreev ◽  
A.A. Lebedev ◽  
M.G. Rastegaeva ◽  
V.E. Chelnokov
Keyword(s):  
Barrier Height ◽  
Surface Barrier

Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance

1999 ◽  
Vol 573 ◽  
Author(s):  
J. S. Hwan ◽  
G. S. Chang
Keyword(s):  
Fermi Level ◽  
Barrier Height ◽  
Surface State ◽  
Transport Theory ◽  
Thermionic Emission ◽  
State Density ◽  
Surface Barrier ◽  
Novel Approach ◽  
State Densities ◽  
Surface Fermi Level

ABSTRACTIn this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes

1997 ◽  
Vol 46 (1-3) ◽  
pp. 236-239 ◽  
Author(s):  
A.L. Syrkin ◽  
J.M. Bluet ◽  
G. Bastide ◽  
T. Bretagnon ◽  
A.A. Lebedev ◽  
...  
Keyword(s):  
Barrier Height ◽  
Surface Barrier

A Method of Studying Surface Barrier Height Changes on Transistors

1958 ◽  
Vol 72 (5) ◽  
pp. 910-914 ◽  
Author(s):  
J R A Beale ◽  
D E Thomas ◽  
T B Watkins
Keyword(s):  
Barrier Height ◽  
Surface Barrier

Metal–n‐6H–SiC surface barrier height—Experimental data and description in the traditional terms

1995 ◽  
Vol 78 (9) ◽  
pp. 5511-5514 ◽  
Author(s):  
A. L. Syrkin ◽  
A. N. Andreev ◽  
A. A. Lebedev ◽  
M. G. Rastegaeva ◽  
V. E. Chelnokov
Keyword(s):  
Experimental Data ◽  
Barrier Height ◽  
Surface Barrier

Determination of surface barrier height and surface state density in GaN films grown on sapphire substrates

2004 ◽  
Vol 831 ◽  
Author(s):  
Seong-Eun Park ◽  
Joseph J. Kopanski ◽  
Youn-Seon Kang ◽  
Lawrence H. Robins ◽  
Hyun-Keel Shin
Keyword(s):  
Barrier Height ◽  
Surface State ◽  
Deep Level ◽  
Surface States ◽  
State Density ◽  
Beam Power ◽  
Surface Barrier ◽  
Surface State Density ◽  
Sapphire Substrates ◽  
Surface Electric Field

ABSTRACTPhotoreflectance (PR) modulation spectroscopy was performed to investigate surface properties of GaN films grown on sapphire substrates. From the period of the Franz-Keldysh oscillations, the surface electric field across the GaN space charge region was found to be (197 ± 11) kV/cm, which corresponds to a surface state density of 1.0×1012 cm−2. A surface barrier height of 0.71 eV was determined by fitting the dependence of the PR intensities on pump beam power density. We suggest that a deep level is formed at 2.68 eV above the GaN valence band edge due to the large density of surface states.

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