Metal–n‐6H–SiC surface barrier height—Experimental data and description in the traditional terms

1995 ◽  
Vol 78 (9) ◽  
pp. 5511-5514 ◽  
Author(s):  
A. L. Syrkin ◽  
A. N. Andreev ◽  
A. A. Lebedev ◽  
M. G. Rastegaeva ◽  
V. E. Chelnokov
Keyword(s):  
Experimental Data ◽  
Barrier Height ◽  
Surface Barrier

Surface barrier height in metal-n-6H-SiC structures

1995 ◽  
Vol 29 (1-3) ◽  
pp. 198-201 ◽  
Author(s):  
A.L. Syrkin ◽  
A.N. Andreev ◽  
A.A. Lebedev ◽  
M.G. Rastegaeva ◽  
V.E. Chelnokov
Keyword(s):  
Barrier Height ◽  
Surface Barrier

Studies of Surface State Densities of Semiconductors by Room-Temperature Photoreflectance

1999 ◽  
Vol 573 ◽  
Author(s):  
J. S. Hwan ◽  
G. S. Chang
Keyword(s):  
Fermi Level ◽  
Barrier Height ◽  
Surface State ◽  
Transport Theory ◽  
Thermionic Emission ◽  
State Density ◽  
Surface Barrier ◽  
Novel Approach ◽  
State Densities ◽  
Surface Fermi Level

ABSTRACTIn this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.

Cu(111) SURFACE RELAXATION BY VLEED

1995 ◽  
Vol 02 (04) ◽  
pp. 477-482 ◽  
Author(s):  
I. BARTOŠ ◽  
P. JAROŠ ◽  
A. BARBIERI ◽  
M.A. VAN HOVE ◽  
W.F. CHUNG ◽  
...  
Keyword(s):  
Experimental Data ◽  
Low Energy ◽  
Energy Electron ◽  
Surface Relaxation ◽  
Surface Barrier ◽  
Reliability Factor ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Image Type ◽  
Good Agreement

Very-low-energy electron diffraction (VLEED) intensities from a clean Cu (111) surface have been measured in detail in the energy range 15–100 eV by low-energy electron microscope (LEEM). This enabled the elimination of possible disturbances due to stray magnetic fields. Corresponding theoretical I–V curves have been obtained in good agreement with experimental data when an image-type surface barrier and anisotropy of the electron attenuation were taken into account. The reliability factor analysis indicates a slight expansion of the topmost interatomic spacing of Cu (111) relative to its bulk value.

Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes

1997 ◽  
Vol 46 (1-3) ◽  
pp. 236-239 ◽  
Author(s):  
A.L. Syrkin ◽  
J.M. Bluet ◽  
G. Bastide ◽  
T. Bretagnon ◽  
A.A. Lebedev ◽  
...  
Keyword(s):  
Barrier Height ◽  
Surface Barrier

scholarly journals Quantum Tunneling and Reaction Rates in Selenoxides and Sulfoxides Elimination

2020 ◽  
Author(s):  
Caio M. Porto ◽  
Nelson H. Morgon
Keyword(s):  
Organic Chemistry ◽  
Experimental Data ◽  
Barrier Height ◽  
Rate Constants ◽  
Quantum Tunneling ◽  
Reaction Rates ◽  
Striking Difference ◽  
Variational Theory ◽  
The Difference ◽  
Good Agreement

Selenoxides and sulfoxides elimination reactions are important, not only to Organic Chemistry synthesis, but also to other areas, as Biochemistry. These reactions were studied, using direct dynamics calculations, at the canonical variational theory (CVT) and small curvature tunneling (SCT) level. The calculated rate constants for the selenoxide reaction were in good agreement with experimental data, 8.83 × 10-5 s -1 and 3.20 × 10-5 s -1 , respectively. The rate constants for the sulfoxide reaction are very small at 37°C, namely 2.43 × 10-9 , and there is also a significant tunneling correction, which shows quantum tunneling effects occur in both reactions, although with very different magnitudes. One of the most striking difference comes from the barrier height, which is almost 2000 cm-1 bigger for the sulfoxide elimination, and helps to explain the difference in reaction rates.

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