Whisker Formation in Pb-Free Surface Finishes

2019 ◽  
Vol 1 (13) ◽  
pp. 71-85 ◽  
Author(s):  
Gery Stafford ◽  
Maureen Williams ◽  
Christian Johnson ◽  
Kil-Won Moon ◽  
William Boettinger ◽  
...  
2019 ◽  
Vol 28 (2) ◽  
pp. 499-512 ◽  
Author(s):  
Gery Stafford ◽  
Maureen Williams ◽  
Jae Wook Shin ◽  
Kil-Won Moon ◽  
Carlos Beauchamp ◽  
...  

2002 ◽  
Vol 14 (3) ◽  
pp. 19-24 ◽  
Author(s):  
Richard Ludwig ◽  
Ning‐Cheng Lee ◽  
Chonglun Fan ◽  
Yun Zhang

Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.


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