Impact of Al, Ni, and TiN Metal Gates On ZrO2-MOS Capacitors

2019 ◽  
Vol 1 (5) ◽  
pp. 507-515 ◽  
Author(s):  
Stephan M. Abermann ◽  
Joseph Efavi ◽  
Alois Lugstein ◽  
Erwin Auer ◽  
Heiner Gottlob ◽  
...  
Keyword(s):  
Mos Capacitors ◽  
Metal Gates ◽  
Tin Metal

scholarly journals Electrical Characterization of Postmetal Annealed Ultrathin TiN Gate Electrodes in Si MOS Capacitors

2016 ◽  
Vol 2016 ◽  
pp. 1-4 ◽  
Author(s):  
Z. N. Khan ◽  
S. Ahmed ◽  
M. Ali
Keyword(s):  
Electrical Characterization ◽  
Atomic Layer ◽  
Device Fabrication ◽  
Process Window ◽  
Gate Stacks ◽  
Mos Capacitors ◽  
Hafnium Silicate ◽  
Gate Electrodes ◽  
Layer Deposition ◽  
Tin Metal

Focusing on sub-10 nm Silicon CMOS device fabrication technology, we have incorporated ultrathin TiN metal gate electrode in Hafnium Silicate (HfSiO) based metal-oxide capacitors (MOSCAP) with carefully chosen Atomic Layer Deposition (ALD) process parameters. Gate element of the device has undergone a detailed postmetal annealed sequence ranging from 100°C to 1000°C. The applicability of ultrathin TiN on gate electrodes is established through current density versus voltage (J-V), resistance versus temperature (R-T), and permittivity versus temperature analysis. A higher process window starting from 600°C was intentionally chosen to understand the energy efficient behavior expected from ultrathin gate metallization and its unique physical state with shrinking thickness. The device characteristics in form of effective electronic mobility as a function of inverse charge density were also found better than those conventional gate stacks used for EOT scaling.

High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials

1999 ◽  
Vol 567 ◽  
Author(s):  
B. Claflin ◽  
K. Flock ◽  
G. Lucovsky
Keyword(s):  
Oxide Semiconductor ◽  
Metal Nitrides ◽  
Mos Capacitors ◽  
Gate Electrodes ◽  
Metal Gates ◽  
High K ◽  
Dielectric Interfaces ◽  
Work Functions ◽  
Dual Metal ◽  
Cv Measurements

ABSTRACTSeveral metal and conducting metal nitride candidates were investigated for alternative gate electrode applications in future complimentary metal-oxide-semiconductor (CMOS) devices. High frequency capacitance-voltage (CV) measurements were performed on n-MOS and p-MOS capacitors with Al, Ta, TaN, TIN, or W2N gates and ultra-thin SiO2/Si3N4 dielectric stacks. The work functions of Al and Ta were close to the conduction band of Si as expected while all the metal nitrides had work functions slightly above mid-gap. The thermal stability of the metal nitrides and the metal/dielectric interfaces was studied by Auger electron spectroscopy (AES) following rapid thermal annealing (RTA). Integration requirements for dual metal gate electrodes in future CMOS devices are discussed.

Clarification of Additional Mobility Components associated with TaC and TiN Metal Gates in scaled HfSiON MOSFETs down to sub-1.0nm EOT

2007 ◽  
Author(s):  
Kosuke Tatsumura ◽  
Masakazu Goto ◽  
Shigeru Kawanaka ◽  
Kazuaki Nakajima ◽  
Tatsuo Schimizu ◽  
...  
Keyword(s):  
Metal Gates ◽  
Tin Metal

Investigation of the Growth and Chemical Stability of Composite Metal Gates on Ultra-thin Gate Dielectrics

1998 ◽  
Vol 532 ◽  
Author(s):  
B. Claflin ◽  
M. Binger ◽  
G. Lucovsky ◽  
H.-Y. Yang
Keyword(s):  
Chemical Stability ◽  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Mos Capacitors ◽  
Metal Gates ◽  
Bulk Film ◽  
Chemical Vapor Deposited ◽  
Capacitance Voltage ◽  
Dielectric Interfaces ◽  
On Line

ABSTRACTThe growth of reactively sputtered TiNx and WNx compound metal films on ultra-thin, remote plasma enhanced chemical vapor deposited SiO2 and SiO2/Si3N4 (ON) stack dielectrics is investigated from initial interface formation to bulk film by interrupted growth and on-line Auger electron spectroscopy (AES). Growth of both metals occurs uniformly without a seed layer on both dielectrics. The chemical stability of these metal/dielectric interfaces is studied by sequential on-line rapid thermal annealing treatments up to 850 °C and AES. TiNx reacts with SiO2 above 850 °C but the addition of a Si3N4 dielectric top-layer makes the TiNx/ON interface chemically stable at 850 °C. WNx/SiO2 and WNx/Si3N4 interfaces are both stable below 650 °C. MOS capacitors using TiNx or WNx metal gates and thermal SiO2 gate dielectrics exhibit excellent capacitance-voltage characteristics. The work function for TiNx lies near midgap in Si while for WNx it lies closer to the valence band.

Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric

2002 ◽  
Vol 716 ◽  
Author(s):  
S.B. Samavedam ◽  
J.K. Schaeffer ◽  
D.C. Gilmer ◽  
V. Dhandapani ◽  
P.J. Tobin ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Gate Dielectric ◽  
Oxide Thickness ◽  
Metal Gate ◽  
Mos Capacitors ◽  
Dielectric Thickness ◽  
Metal Gates ◽  
Polysilicon Gate ◽  
Dual Metal ◽  
High Dielectric

AbstractAs the MOSFET gate lengths are scaled down to 50 nm or below, the expected increase in gate leakage will be countered by the use of a high dielectric constant (high K) material. The series capacitance from polysilicon gate electrode depletion significantly reduces the gate capacitance as the dielectric thickness is scaled down to 10 Å equivalent oxide thickness (EOT) or below. Metal gates promise to solve this problem and address other problems like boron penetration and enhanced gate resistance that will have increased focus as the polysilicon gate thickness is reduced. Extensive simulations have shown that the optimal gate work-functions for the sub-50 nm channel lengths should be 0.2 eV below (above) the conduction (valence) band edge of silicon for n-MOSFETs (p-MOSFETs). This study summarizes the evaluations of TiN, TaSiN, WN, TaN, TaSi, Ir and IrO2 as candidate metals for dual-metal gate CMOS using HfO2 as the gate dielectric. The gate work-function was determined by fabricating MOS capacitors with varying dielectric thicknesses and different post-gate anneals. The metal-dielectric compatibility and thermal stability was studied by annealing the stacks at different temperatures. The gate stacks were characterized using TEM, SIMS and X-ray diffraction. Based on workfunctions and thermal stability, TaSiN and TaN show most promise as metal electrodes for HfO2 n-MOSFETs.

Mitigation of Reverse Short-Channel Effect With Multilayer TiN/Ti/TiN Metal Gates in Gate Last PMOSFETs

2014 ◽  
Vol 35 (8) ◽  
pp. 811-813 ◽  
Author(s):  
Lichuan Zhao ◽  
Zhaoyun Tang ◽  
Bo Tang ◽  
Xueli Ma ◽  
Jinbiao Liu ◽  
...  
Keyword(s):  
Short Channel ◽  
Short Channel Effect ◽  
Metal Gates ◽  
Channel Effect ◽  
Tin Metal

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

2015 ◽  
Vol 118 (4) ◽  
pp. 045307 ◽  
Author(s):  
Christopher J. Brennan ◽  
Christopher M. Neumann ◽  
Steven A. Vitale
Keyword(s):  
Gate Dielectric ◽  
Atomic Layer ◽  
Plasma Damage ◽  
Metal Gates ◽  
Tin Metal
Sign in / Sign up

Export Citation Format

Share Document