SiO[sub 2] Incorporation Effects in Ge[sub 2]Sb[sub 2]Te[sub 5] Films Prepared by Magnetron Sputtering for Phase Change Random Access Memory Devices

2006 ◽  
Vol 9 (8) ◽  
pp. G259 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jin Ho Oh ◽  
Byung Joon Choi ◽  
Sung-Yeon Hwang ◽  
Suk Kyoung Hong ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory

Preparation of Ge2Sb2Te5 thin film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering

2006 ◽  
Vol 918 ◽  
Author(s):  
Shin Kikuchi ◽  
Dong Yong Oh ◽  
Isao Kimura ◽  
Yutaka Nishioka ◽  
Koukou Suu
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Rf Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Access Memory ◽  
Target Composition

AbstractPhase Change Random Access Memory [PRAM] is one of the candidate for next generation memory due to its non-volitality, high speed, high density and compatibility with Si-based semiconductor process. Ge2Sb2Te5 [GST] thin film , an active layer in this device, is utilized because it has the well-known property of rapid crystallization without phase separation in erasable compact discs industry.We investigated the difference of the character of the GST thin film with various sputtering methods. 100nm thick GST films were prepared with DC magnetron sputtering and RF magnetron sputtering for this experiment. XRF, XRD,SEM and four point probe measurement are used to analyze the electrical properties of these films.As for the composition of the DC sputtered GST films, Te was insufficient from target composition, while the composition of RF sputtered GST films were almost same as target composition. The RF sputtered GST films were composed of hcp by 400°C annealing. On the other hand, the DC sputtered films were mixed-phase of fcc and hcp. The resistivity of DC Sputtered GST films was higher than RF sputtered film cause of poor crystallinity. The uniformity of RF sputtered film was better than DC sputtered film.

scholarly journals Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

2015 ◽  
Vol 7 (6) ◽  
pp. e194-e194 ◽  
Author(s):  
Kyungjoon Baek ◽  
Kyung Song ◽  
Sung Kyu Son ◽  
Jang Won Oh ◽  
Seung-Joon Jeon ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
In Situ Tem ◽  
Memory Devices ◽  
Access Memory ◽  
Set Switching

Parasitic capacitance effect on programming performance of phase change random access memory devices

2010 ◽  
Vol 96 (4) ◽  
pp. 043506 ◽  
Author(s):  
E. G. Yeo ◽  
L. P. Shi ◽  
R. Zhao ◽  
K. G. Lim ◽  
T. C. Chong ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Parasitic Capacitance ◽  
Memory Devices ◽  
Access Memory ◽  
Capacitance Effect

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

Reversible switching in bicontinuous structure for phase change random access memory application

Nanoscale ◽  
2021 ◽  
Vol 13 (8) ◽  
pp. 4678-4684
Author(s):  
Yan Cheng ◽  
Yonghui Zheng ◽  
Zhitang Song
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Bicontinuous Structure ◽  
Amorphous Si

A 3D nano-bicontinuous structure consisting of a reversible Sb2Te3 phase and amorphous Si phase is visualized. The amorphous Si frame is stable and the Sb2Te3 nano areas switch between the a- and f-structure.

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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