Study of a 4 Micron Oxide Etching Using C5F8/O2/Ar Plasma

2019 ◽  
Vol 2 (4) ◽  
pp. 13-21
Author(s):  
Fabienne Judong ◽  
Linda Depoyan ◽  
Nicolas Hotellier ◽  
Martial Baudrier ◽  
Pierre Bouillon
Keyword(s):  
Oxide Etching ◽  
Ar Plasma

Effects of hydrogen-damaged layer on tin-doped indium oxide etching by H2/Ar plasma

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HD02 ◽  
Author(s):  
Akiko Hirata ◽  
Masanaga Fukasawa ◽  
Takushi Shigetoshi ◽  
Masaki Okamoto ◽  
Kazunori Nagahata ◽  
...  
Keyword(s):  
Indium Oxide ◽  
Oxide Etching ◽  
Ar Plasma

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

scholarly journals Silicon Oxide Etching Process of NF3 and F3NO Plasmas with a Residual Gas Analyzer

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 3026
Author(s):  
Woo-Jae Kim ◽  
In-Young Bang ◽  
Ji-Hwan Kim ◽  
Yeon-Soo Park ◽  
Hee-Tae Kwon ◽  
...  
Keyword(s):  
Greenhouse Gas ◽  
Silicon Oxide ◽  
Gas Analysis ◽  
Gas Analyzer ◽  
Dc Offset ◽  
Cleaning Performance ◽  
Oxide Etching ◽  
Residual Gas ◽  
Etch Rates ◽  
Very High

The use of NF3 is significantly increasing every year. However, NF3 is a greenhouse gas with a very high global warming potential. Therefore, the development of a material to replace NF3 is required. F3NO is considered a potential replacement to NF3. In this study, the characteristics and cleaning performance of the F3NO plasma to replace the greenhouse gas NF3 were examined. Etching of SiO2 thin films was performed, the DC offset of the plasma of both gases (i.e., NF3 and F3NO) was analyzed, and a residual gas analysis was performed. Based on the analysis results, the characteristics of the F3NO plasma were studied, and the SiO2 etch rates of the NF3 and F3NO plasmas were compared. The results show that the etch rates of the two gases have a difference of 95% on average, and therefore, the cleaning performance of the F3NO plasma was demonstrated, and the potential benefit of replacing NF3 with F3NO was confirmed.

Microwave N2–Ar plasma torch. I. Modeling

2011 ◽  
Vol 109 (2) ◽  
pp. 023301 ◽  
Author(s):  
J. Henriques ◽  
E. Tatarova ◽  
C. M. Ferreira
Keyword(s):  
Plasma Torch ◽  
Ar Plasma

scholarly journals Effect of cold Ar plasma treatment on the catalytic performance of Pt/CeO2 in water-gas shift reaction (WGS)

2018 ◽  
Vol 225 ◽  
pp. 121-127 ◽  
Author(s):  
Laura Pastor-Pérez ◽  
Victor Belda-Alcázar ◽  
Carlo Marini ◽  
M. Mercedes Pastor-Blas ◽  
Antonio Sepúlveda-Escribano ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Catalytic Performance ◽  
Water Gas Shift ◽  
Water Gas Shift Reaction ◽  
Ar Plasma ◽  
Shift Reaction ◽  
Water Gas
Sign in / Sign up

Export Citation Format

Share Document