X-Ray Photoelectron Spectroscopy Analysis of Oxygen Annealed Radio Frequency Sputter Deposited SiCN Thin Films

2006 ◽  
Vol 153 (7) ◽  
pp. G640 ◽  
Author(s):  
R. M. Todi ◽  
A. P. Warren ◽  
K. B. Sundaram ◽  
K. R. Coffey
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Analysis ◽  
X Ray ◽  
Sputter Deposited ◽  
Sicn Thin Films

scholarly journals X-ray photoelectron spectroscopy analysis of Ge-Sb-Se pulsed laser deposited thin films

2018 ◽  
Vol 101 (8) ◽  
pp. 3347-3356 ◽  
Author(s):  
Emeline Baudet ◽  
Christophe Cardinaud ◽  
Rémi Boidin ◽  
Aurélie Girard ◽  
Jan Gutwirth ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Spectroscopy Analysis ◽  
X Ray

X-ray photoelectron spectroscopy analysis of TiBx (1.3 ≤ x ≤ 3.0) thin films

2021 ◽  
Vol 39 (2) ◽  
pp. 023403
Author(s):  
Niklas Hellgren ◽  
Grzegorz Greczynski ◽  
Mauricio A. Sortica ◽  
Ivan Petrov ◽  
Lars Hultman ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Spectroscopy Analysis ◽  
X Ray

scholarly journals X-ray photoelectron spectroscopy analysis of the effect of thickness on the transformation temperature of NiTi alloy thin films

2009 ◽  
Vol 58 (4) ◽  
pp. 2742
Author(s):  
Li Yong-Hua ◽  
Liu Chang-Sheng ◽  
Meng Fan-Ling ◽  
Wang Yu-Ming ◽  
Zheng Wei-Tao
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Transformation Temperature ◽  
Niti Alloy ◽  
Spectroscopy Analysis ◽  
X Ray

Sputter Deposition and Thermally Induced Phase Transformation of Non-BCC Chromium Thin Films

1993 ◽  
Vol 311 ◽  
Author(s):  
M. J. O'Keefe ◽  
S. Horiuchi ◽  
J.J. Chu ◽  
J.J. Rigsbee
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Low Carbon Steel ◽  
Substrate Material ◽  
Low Carbon ◽  
Thermally Induced ◽  
X Ray ◽  
Sputter Deposited ◽  
Cr Film

ABSTRACTThe crystal structure of sputter deposited chromium thin films on Coming 7059 glass, polytetrafluoroethylene, and cold rolled (110) oriented low carbon steel α-Fe substrates was investigated as a function of O and C incorporation into the growing Cr film. The as-deposited crystal structure of the films was found by X-ray diffraction to be either highly oriented (110) BCC α-Cr or (200) oriented A-15 δ-Cr. Chemical analysis of the films by Auger electron spectroscopy determined that the δ-Cr phaseformed when the combined O and C impurity concentration in the film was ∼15-30 at.%. At total impurity concentrations above ∼30 at.% or below ∼10 at.% standard BCC α-Cr formed. The crystal structure of the films was not influenced by the substrate material. X-ray photoelectron spectroscopy of the Cr 2pl/2-2p3/2 orbitals indicated that the dominate binding state of both the BCC α-Cr and A-15 δ-Cr films was characteristic of elemental Cr. Vacuum annealing of the A-15 δ-Cr films at 500º for one hour transformed the crystal structure into BCC α-Cr without a measurable change in chemical composition. The incorporation of O and C into the growing Cr film is believed to impurity stabilize the A-15 structure and favor its formation over the BCC structure.

Stress, Microstructure and Temperature Stability of Reactive Sputter Deposited Ta(N) Thin Films

1999 ◽  
Vol 594 ◽  
Author(s):  
K. D. Leedy ◽  
M. J. O'Keefe ◽  
J. T. Grant
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Temperature Stability ◽  
Microstructural Characterization ◽  
Tantalum Nitride ◽  
X Ray ◽  
Nitrogen Concentrations ◽  
Sputter Deposited ◽  
Temperature Exposure

AbstractInterest in tantalum nitride thin films for use as diffusion barriers in Cu-based microelectronic interconnects merits the study of tantalum nitride thin film properties as a function of deposition conditions and elevated temperature exposure. In this investigation, the influence of nitrogen content and post deposition annealing on the stress, microstructure and resistivity of Ta(N) films was analyzed. Ta(N) thin films were deposited by reactive dc magnetron sputtering of a Ta target in Ar/N2 gas mixtures. With an increasing N2 to Ar flow ratio, the as-deposited crystal structure of the films changed from ß-Ta to bcc Ta with N in solid solution to TaN0.1 to Ta2N and finally to TaN. The as-deposited Ta(N) stress, grain size and resistivity of the films were found to be strongly dependent on the phase(s) present. Films with less than 20 at. % nitrogen concentration displayed large compressive stress increases during 650°C anneals in flowing N2. Phase transformations to Ta2N occurred after 650°C anneals in films with nitrogen concentrations from ∼ 15 to 25 at. %. Microstructural characterization using transmission electron microscopy and x-ray diffraction, and chemical analysis by x-ray photoelectron spectroscopy and Auger electron spectroscopy of the Ta(N) films were used to identify the as-deposited and transformed phases.

Photoelectrochemical Properties and Photocatalytic Activity of Fluorine-Doped Plate-Like WO3 from Hydrothermal Radio-Frequency (RF) Sputtered Tungsten Thin Films

NANO ◽  
2017 ◽  
Vol 12 (04) ◽  
pp. 1750041 ◽  
Author(s):  
Yahui Yang ◽  
Guanhua Jin ◽  
Hang Li
Keyword(s):  
Thin Films ◽  
Photocatalytic Activity ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Hydrofluoric Acid ◽  
Diffuse Reflectance ◽  
Visible Region ◽  
Photoelectrochemical Cell ◽  
X Ray ◽  
Degradation Of Methyl Orange

Fluorine-doped tungsten oxide (WO3) plate-like films were synthesized by hydrothermal radio-frequency (RF) sputtered tungsten (W) thin films in HF solution. The crystal structure, composition and morphology of nitrogen fluorine (F) doped WO3 were characterized by scanning electron microscope (SEM), X-ray diffractometer (XRD), X-ray photoelectron spectroscopy (XPS), and UV-Vis diffuse reflectance spectra (DRS) techniques. The results indicate that fluorine can be doped successfully into WO3 plate-like films by hydrothermal synthesis in hydrofluoric acid (HF) solution. The F-doped WO3 samples show stronger absorption in the UV-Vis range and a red shift in the band gap transition. Incident photon to current efficiency (IPCE) measurements carried out on photoelectrochemical cell with F-doped WO3 plate-like films as anodes demonstrate a significant increase of photoresponse in the visible region compared with undoped WO3. The photocatalytic activity under visible light irradiation for newly synthesized F-doped WO3 plate-like films was investigated by degradation of methyl orange. The photocatalytic activity of F-doped WO3 plate-like films was 3-fold enhancement compared with pure WO3 samples.

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