X‐ray photoelectron spectroscopy characterization of radio frequency reactively sputtered carbon nitride thin films

1996 ◽  
Vol 14 (5) ◽  
pp. 2687-2692 ◽  
Author(s):  
Sunil Kumar ◽  
K. S. A. Butcher ◽  
T. L. Tansley
Keyword(s):  
Thin Films ◽  
Radio Frequency ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
X Ray

The Growth and Characterization of Germanium-Carbon Alloy Thin Films

1992 ◽  
Vol 270 ◽  
Author(s):  
Haojie Yuan ◽  
R. Stanley Williams
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Vacuum Chamber ◽  
Optical Band Gap ◽  
High Vacuum ◽  
Optical Absorption Spectroscopy ◽  
Alloy Thin Film ◽  
New Materials ◽  
X Ray

ABSTRACTThin films of pure germanium-carbon alloys (GexC1−x with x ≈ 0.0, 0.2, 0.4, 0.5, 0.6, 0.8, 1.0) have been grown on Si(100) and A12O3 (0001) substrates by pulsed laser ablation in a high vacuum chamber. The films were analyzed by x-ray θ-2θ diffraction (XRD), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), conductivity measurements and optical absorption spectroscopy. The analyses of these new materials showed that films of all compositions were amorphous, free of contamination and uniform in composition. By changing the film composition, the optical band gap of these semiconducting films was varied from 0.00eV to 0.85eV for x = 0.0 to 1.0 respectively. According to the AES results, the carbon atoms in the Ge-C alloy thin film samples has a bonding configuration that is a mixture of sp2 and sp3 hybridizations.

Studies of Carbon Nitride Thin Films Synthesized by KrF Excimer Ablation of Graphite in Nitrogen Atmosphere

1998 ◽  
Vol 526 ◽  
Author(s):  
Z.M. Ren ◽  
Y.F. Lu ◽  
W.D. Song ◽  
D.S.H. Chan ◽  
T.S. Low ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Nitrogen Pressure ◽  
Laser Wavelength ◽  
Nitrogen Atmosphere ◽  
Amorphous Semiconductor ◽  
X Ray ◽  
Krf Excimer Laser

AbstractCarbon nitride thin films were deposited on silicon wafers by pulsed KrF excimer laser (wavelength 248 nm, duration 23 ns) ablation of graphite in nitrogen atmosphere. Different fluences of the excimer laser and pressures of the nitrogen atmosphere were used in order to achieve a high nitrogen content in the deposited thin films. Fourier Transform Infra-red (FTIR) and X-ray photoelectron spectroscopy (XPS) were used to identify the binding structure and the content of the nitrogen species in the deposited thin films. The highest N/C ratio 0.42 was achieved at an excimer laser fluence of 0.8 Jcm -2with a repetition rate of 10 Hz under the nitrogen pressure of PN=100 mTorr. A high content of C=N double bond instead of C-N triple bond was indicated in the deposited thin films. Ellipsometry was used to analyze the optical properties of the deposited thin films. The carbon nitride thin films have amorphous-semiconductor-like characteristics with the optical band gap Eop, as high as 0.42 eV.

Effects of Irradiation by Low Energy Nitrogen Ions on Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yuka Nasu ◽  
Masami Aono ◽  
Shinichiro Aizawa ◽  
Nobuaki Kitazawa ◽  
Yoshihisa Watanabe
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Chemical Vapor ◽  
Low Energy ◽  
Carbon Filament ◽  
X Ray ◽  
Nitrogen Ions

ABSTRACTCarbon nitride (CNx) thin films have been prepared by hot carbon filament chemical vapor deposition, and the nitrogen content in the films is approximately 0.05. The CNx films have been irradiated by 0.1 keV nitrogen ions to increase the nitrogen content after deposition. The nitrogen content in the CNx films was obtained with X-ray photoelectron spectroscopy. Scanning electron microscopy was employed to study microstructures of the films. The experimental results show that nitrogen ions are chemically combined with the CNx films and as a result the nitrogen content increases up to approximately 0.30. Furthermore, it is found that nitrogen ions change the film microstructures and sputter the surfaces of CNx films.

X-ray diffraction and X-ray photoelectron spectroscopy characterization of sulfurized tin thin films deposited by thermal evaporation

2018 ◽  
Vol 645 ◽  
pp. 409-416
Author(s):  
Hiroto Oomae ◽  
Takahito Eguchi ◽  
Kunihiko Tanaka ◽  
Misao Yamane ◽  
Naofumi Ohtsu
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tin Thin Films

X-ray photoelectron spectroscopy characterization of amorphous molybdenum oxysulfide thin films

1995 ◽  
Vol 258 (1-2) ◽  
pp. 110-114 ◽  
Author(s):  
L. Benoist ◽  
D. Gonbeau ◽  
G. Pfister-Guillouzo ◽  
E. Schmidt ◽  
G. Meunier ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
X Ray
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