Study of Inhibition Characteristics of Slurry Additives in Copper CMP Using Force Spectroscopy

2019 ◽  
Vol 2 (2) ◽  
pp. 515-522 ◽  
Author(s):  
Manish K. Keswani ◽  
Hyosang Lee ◽  
Suryadevara Babu ◽  
Udaya Patri ◽  
Youngki Hong ◽  
...  
2007 ◽  
Vol 8 (1) ◽  
pp. 5-10
Author(s):  
Hyo-Sang Lee ◽  
Ara Philipossian ◽  
Suryadevara V. Babu ◽  
Udaya B. Patri ◽  
Young-Ki Hong ◽  
...  

Author(s):  
Z. G. Song ◽  
S. P. Neo ◽  
S. K. Loh ◽  
C. K. Oh

Abstract New process will introduce new failure mechanisms during microelectronic device manufacturing. Even if the same defect, its root causes can be different for different processes. For aluminum(Al)-tungsten(W) metallization, the root cause of metal bridging is quite simple and mostly it is blocked etch or under-etch. But, for copper damascene process, the root causes of metal bridging are complicated. This paper has discussed the various root causes of metal bridging for copper damascene process, such as those related to litho-etch issue, copper CMP issue, copper corrosion issue and so on.


Micron ◽  
2021 ◽  
Vol 145 ◽  
pp. 103062
Author(s):  
Agnieszka Maria Kolodziejczyk ◽  
Paulina Sokolowska ◽  
Aleksandra Zimon ◽  
Magdalena Grala ◽  
Marcin Rosowski ◽  
...  

2021 ◽  
Vol 714 (3) ◽  
pp. 032023
Author(s):  
Ling Chen ◽  
Liya Yang ◽  
Chunxia Wang ◽  
Ting Zhu

Polymer ◽  
2015 ◽  
Vol 67 ◽  
pp. 111-117 ◽  
Author(s):  
Ateyyah AL-Baradi ◽  
Michael R. Tomlinson ◽  
Zhenyu J. Zhang ◽  
Mark Geoghegan

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