Parameters of Intrinsic Point Defects in Silicon Based on Crystal Growth, Wafer Processing, Self- and Metal- Diffusion

2019 ◽  
Vol 2 (2) ◽  
pp. 61-75 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Intrinsic Point Defects ◽  
Metal Diffusion ◽  
Wafer Processing ◽  
Silicon Based

Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion

2005 ◽  
Vol 108-109 ◽  
pp. 1-10 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert J. Falster
Keyword(s):  
Temperature Dependence ◽  
Point Defects ◽  
Strong Temperature Dependence ◽  
Depth Profiles ◽  
Intrinsic Point Defects ◽  
Self Diffusion ◽  
Metal Diffusion ◽  
Unified View ◽  
Equilibrium Concentrations ◽  
Wafer Processing

There are several phenomena where the properties of vacancies and self-interstitials in silicon are manifested in straightforward ways. These include the formation of grown-in microdefects, the diffusion of metals (such as Au, Zn), self-diffusion and the installation of vacancy depth profiles in wafers by Rapid Thermal Annealing. Combining features extracted from the analysis of these phenomena, it is possible to define the diffusivities and equilibrium concentrations of the intrinsic point defects. Their diffusivities are remarkably high, and have weak temperature dependence. Their equilibrium concentrations are very low, and have strong temperature dependence.

Intrinsic Point Defects in Silicon Crystal Growth

2011 ◽  
Vol 178-179 ◽  
pp. 3-14 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Vacancy Concentration ◽  
Silicon Crystal ◽  
Growth Conditions ◽  
Intrinsic Point Defects ◽  
Silicon Crystals ◽  
Low Concentrations ◽  
Different Populations ◽  
Vacancy Concentrations

In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are incorporated into a growing crystal. Their incorporated concentration is relatively low (normally, less than 1014 cm-3 - much lower than the concentration of impurities). In spite of this, they play a crucial role in the control of the structural properties of silicon materials. Modern silicon crystals are grown mostly in the vacancy mode and contain many vacancy-based agglomerates. At typical grown-in vacancy concentrations the dominant agglomerates are voids, while at lower vacancy concentrations there are different populations of joint vacancy-oxygen agglomerates (oxide plates). Larger plates – formed in a narrow range of vacancy concentration and accordingly residing in a narrow spatial band – are responsible for the formation of stacking fault rings in oxidized wafers. Using advanced crystal growth techniques, whole crystals can be grown at such low concentrations of vacancies or self-interstitials such that they can be considered as perfect.

The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

1995 ◽  
Vol 378 ◽  
Author(s):  
Y. Tsumori ◽  
K. Nakai ◽  
T. Iwasaki ◽  
H. Haga ◽  
K. Kojima ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Defect Density ◽  
Gate Oxide ◽  
Cooling Time ◽  
Intrinsic Point Defects ◽  
Pair Annihilation ◽  
Temperature Ranges ◽  
Gate Oxide Integrity

AbstractThe formation of grown-in defects degrading the gate oxide integrity (GOI) has been studied. The growth-halting experiments were carried out to investigate the temperature ranges at which the formation of the defects was promoted or suppressed. GOI is improved in the crystal regions slowly cooled above 1330°C and between 1060°C and 1100°C. It is degraded in the crystal regions held below 1060°C. In the peripheral of the crystals, those temperature ranges are about 30°C lower. The defects are formed and grown below 1060°C in the center part of the crystal. The defect density is decreased with cooling time between 1060°C and 1100°C. These phenomena are considered to be closely related with reactions of intrinsic point defects, that is, the pair annihilation or the aggregation. The temperatures at which the pair annihilation and the aggregation of the point defects occur are dependent upon the supersaturation of the point defects.

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