Integration of HfxTayN Metal Gate Electrode with High-k Gate Dielectric in MOS Devices

Rosa María Luna-Sánchez; Ignacio González-Martínez

doi:10.1149/1.2193872

Integration of HfxTayN Metal Gate Electrode with High-k Gate Dielectric in MOS Devices

ECS Transactions ◽

10.1149/1.2193872 ◽

2019 ◽

Vol 2 (1) ◽

pp. 41-48

Author(s):

Rosa María Luna-Sánchez ◽

Ignacio González-Martínez

Keyword(s):

Gate Dielectric ◽

Gate Electrode ◽

Metal Gate ◽

Mos Devices ◽

High K ◽

High K Gate Dielectric

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Integration of HfxTayN Metal Gate Electrode with High-k Gate Dielectric in MOS Devices

ECS Meeting Abstracts ◽

10.1149/ma2006-01/9/380 ◽

2006 ◽

Keyword(s):

Gate Dielectric ◽

Gate Electrode ◽

Metal Gate ◽

Mos Devices ◽

High K ◽

High K Gate Dielectric

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Voltage stress induced interface states and hole trapping in germanium pMOSFETs with high-k gate dielectric and metal-gate electrode

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105612 ◽

2021 ◽

Vol 124 ◽

pp. 105612

Author(s):

Fu-Chien Chiu ◽

Wei-Chia Chen ◽

Jih-Huah Wu ◽

Kuei-Shu Chang-Liao

Keyword(s):

Gate Dielectric ◽

Interface States ◽

Gate Electrode ◽

Metal Gate ◽

Hole Trapping ◽

High K ◽

Voltage Stress ◽

High K Gate Dielectric

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A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode

Microelectronics Reliability ◽

10.1016/j.microrel.2010.04.016 ◽

2010 ◽

Vol 50 (8) ◽

pp. 1081-1086 ◽

Cited By ~ 2

Author(s):

J.P. Xu ◽

X. Xiao ◽

P.T. Lai

Keyword(s):

Carrier Mobility ◽

Gate Dielectric ◽

Mobility Model ◽

Gate Electrode ◽

Metal Gate ◽

High K ◽

High K Gate Dielectric

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Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode

Solid-State Electronics ◽

10.1016/j.sse.2004.05.045 ◽

2004 ◽

Vol 48 (10-11) ◽

pp. 1987-1992 ◽

Cited By ~ 28

Author(s):

Shiyang Zhu ◽

H.Y. Yu ◽

J.D. Chen ◽

S.J. Whang ◽

J.H. Chen ◽

...

Keyword(s):

Low Temperature ◽

Schottky Barrier ◽

Gate Dielectric ◽

Gate Electrode ◽

Metal Gate ◽

High K ◽

High K Gate Dielectric

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Characterization of high-k gate dielectric and metal gate electrode semiconductor samples with a total reflection X-ray fluorescence spectrometer

Spectrochimica Acta Part B Atomic Spectroscopy ◽

10.1016/j.sab.2004.04.009 ◽

2004 ◽

Vol 59 (8) ◽

pp. 1227-1234 ◽

Cited By ~ 11

Author(s):

Chris M. Sparks ◽

Meredith R. Beebe ◽

Joe Bennett ◽

Brendan Foran ◽

Carolyn Gondran ◽

...

Keyword(s):

Gate Dielectric ◽

Total Reflection ◽

Gate Electrode ◽

Metal Gate ◽

X Ray ◽

High K ◽

Fluorescence Spectrometer ◽

High K Gate Dielectric

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CMOS Devices - Metal Gate & High-K Gate Dielectric

2007 IEEE International Electron Devices Meeting ◽

10.1109/iedm.2007.4418859 ◽

2007 ◽

Author(s):

Jong Shik Yoon ◽

Aaron Thean

Keyword(s):

Gate Dielectric ◽

Metal Gate ◽

High K ◽

High K Gate Dielectric

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Gate leakage properties of MOS devices with tri-layer high-k gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2006.06.002 ◽

2007 ◽

Vol 47 (6) ◽

pp. 937-943 ◽

Cited By ~ 7

Author(s):

W.B. Chen ◽

J.P. Xu ◽

P.T. Lai ◽

Y.P. Li ◽

S.G. Xu

Keyword(s):

Gate Dielectric ◽

Gate Leakage ◽

Mos Devices ◽

High K ◽

High K Gate Dielectric

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Improvement of metal gate/high-k dielectric CMOSFETs characteristics by atomic layer etching of high-k gate dielectric

Solid-State Electronics ◽

10.1016/j.sse.2012.11.008 ◽

2013 ◽

Vol 82 ◽

pp. 82-85 ◽

Cited By ~ 4

Author(s):

K.S. Min ◽

C. Park ◽

C.Y. Kang ◽

C.S. Park ◽

B.J. Park ◽

...

Keyword(s):

Gate Dielectric ◽

Atomic Layer ◽

Metal Gate ◽

High K ◽

High K Dielectric ◽

Atomic Layer Etching ◽

High K Gate Dielectric

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Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric

2006 IEEE International Reliability Physics Symposium Proceedings ◽

10.1109/relphy.2006.251309 ◽

2006 ◽

Author(s):

T. Pompl ◽

H. Mogul ◽

M. Kerber ◽

G. Haase ◽

E. Ogawa ◽

...

Keyword(s):

Gate Dielectric ◽

Metal Gate ◽

The Road ◽

Cmos Scaling ◽

Road Map ◽

High K ◽

Tin Metal ◽

High K Gate Dielectric

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Schottky Source/Drain MOSFETs on SiGe on Insulator with high-K gate dielectric and TaN gate electrode

2006 International Workshop on Junction Technology ◽

10.1109/iwjt.2006.220883 ◽

2006 ◽

Author(s):

Fei Gao ◽

Rui Li ◽

D.Z. Chi ◽

S. Balakumar ◽

Chih-Hang Tung ◽

...

Keyword(s):

Gate Dielectric ◽

Gate Electrode ◽

High K ◽

High K Gate Dielectric

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