Characterization of Pb[sub x]Pt[sub y] Alloy Formation on a Pt Substrate during Liquid-Delivery MOCVD of Pb(Zr,Ti)O[sub 3] Thin Films

2006 ◽  
Vol 153 (5) ◽  
pp. F81 ◽  
Author(s):  
Jin Shi Zhao ◽  
Joon Seop Sim ◽  
Hyun Ju Lee ◽  
Dong-Yeon Park ◽  
Gyu Weon Hwang ◽  
...  
Author(s):  
D.C. Dufner

The general goal of this research is to clarify mechanisms of solid state reactions at the atomic level as a step in the rationalization of macroscopic reaction behavior in solids. A study of intermetallic alloy formation resulting from interdiffusion of metals in thin films can be made by HREM. In this work, reactions between Pt and Sn in thin films are studied to elucidate mechanisms for structural and compositional changes during the interdiffusion process.Thin films of Pt and Sn used in this study were prepared by the two-film method introduced by Shiojiri. Few hundred angstroms of Pt were vacuum-deposited onto holey carbon films mounted on TEM grids. Sn films with an average thickness of 200Å were created by evaporation at rates of 15-30 Å/sec onto air-cleaved KBr substrates. The Sn films were wet-stripped and collected on the holey Pt grids. Figure 1 shows a cross-section schematic of a Pt-Sn couple. While this two-film arrangement did not allow observations of the actual reaction interface, microtomy was used to produce cross-sections.


Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.


2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  

2018 ◽  
Vol 14 (2) ◽  
pp. 221-234
Author(s):  
Ahmed Namah Mohamed ◽  
◽  
Jafer Fahdel Odah ◽  
Haider Tawfiq Naeem

2009 ◽  
Vol 25 (1) ◽  
pp. 83-86 ◽  
Author(s):  
Guo-Qiang TAN ◽  
Hai-Yang BO ◽  
Hong-Yan MIAO ◽  
Ao XIA ◽  
Zhong-Liang HE

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