Dual-Damascene Cu/Low-k Interconnect Fabrication Scheme Using Dissoluble Hard Mask Material

2006 ◽  
Vol 153 (2) ◽  
pp. G160 ◽  
Author(s):  
Takeshi Furusawa ◽  
Shuntaro Machida ◽  
Daisuke Ryuzaki ◽  
Kenji Sameshima ◽  
Takeshi Ishida ◽  
...  
Keyword(s):  
Hard Mask ◽  
Dual Damascene ◽  
Mask Material ◽  
Low K

Effective Defect Control in TiN Metal Hard Mask Cu/Low-k Dual Damascene Process

2013 ◽  
Vol 58 (6) ◽  
pp. 143-150 ◽  
Author(s):  
A. Kabansky ◽  
S. S. H. Tan ◽  
E. A. Hudson ◽  
G. Delgadino ◽  
L. Gancs ◽  
...  
Keyword(s):  
Hard Mask ◽  
Dual Damascene ◽  
Damascene Process ◽  
Defect Control ◽  
Tin Metal ◽  
Low K

Dual hard mask process for low-k porous organosilica dielectric in copper dual damascene interconnect fabrication

2001 ◽  
Author(s):  
M. Hiroi ◽  
M. Tada ◽  
H. Ohtake ◽  
S. Saito ◽  
T. Onodera ◽  
...  
Keyword(s):  
Hard Mask ◽  
Dual Damascene ◽  
Low K

Hard Mask through UV Light-induced Damage to Low-k Film During Plasma Process for Dual Damascene

2009 ◽  
Author(s):  
N. Matsunaga ◽  
H. Okumura ◽  
B. Jinnai ◽  
S. Samukawa
Keyword(s):  
Uv Light ◽  
Plasma Process ◽  
Hard Mask ◽  
Dual Damascene ◽  
Low K

Etch Process Optimization and Electrical Improvement in TiN Hard Mask Ultra-Low K Interconnection

2012 ◽  
Vol 1428 ◽  
Author(s):  
Chih-Yang Chang ◽  
Sean Kang ◽  
Chia-ling Kao ◽  
Bhargav S. Citla ◽  
Nikos Bekiaris ◽  
...  
Keyword(s):  
Process Optimization ◽  
Depth Profile ◽  
Etch Depth ◽  
Critical Dimensions ◽  
Hard Mask ◽  
Dual Damascene ◽  
Polymer Interactions ◽  
Rc Delay ◽  
Low K

ABSTRACTAs critical dimensions decrease, key dimension-related dielectric etch challenges emerge, including via and trench uniformity and etch depth profile. The transition to ultra-low-k films such as BDIII (Black Diamond; k=2.55) dielectrics requires consideration of film sensitivity to compositional modification, polymer interactions at pores, and the effect of diffusion. Use of N2/O2 plasma at 60 ˚C to modify the M1 trench profile has been demonstrated to lower the RC delay by 14% as compared to traditional CO2 plasmas at 60˚C. Use of a DHF solution to clean the etching residue in the dual damascene structure results in >97% yield with a tight range of via chain resistance.

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