Gallium Arsenide Phosphide Schottky Barrier Field Effect Transistor

1977 ◽  
Vol 124 (3) ◽  
pp. 430-433 ◽  
Author(s):  
R. K. Pancholy ◽  
W. W. Grannemann
Keyword(s):  
Gallium Arsenide ◽  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gallium Arsenide Phosphide ◽  
Effect Transistor

Dual-gate gallium-arsenide microwave field-effect transistor

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Field ◽  
Dual Gate ◽  
Effect Transistor

scholarly journals AlGaN/GaN field effect transistor with two lateral Schottky barrier gates towards resonant detection in sub-mm range

2019 ◽  
Vol 34 (2) ◽  
pp. 024002 ◽  
Author(s):  
P Sai ◽  
D B But ◽  
I Yahniuk ◽  
M Grabowski ◽  
M Sakowicz ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Gallium arsenide field‐effect transistor by close spaced vapor transport epitaxy

1987 ◽  
Vol 51 (24) ◽  
pp. 2004-2006 ◽  
Author(s):  
J. Mimila‐Arroyo ◽  
R. Castanedo ◽  
F. Chávez ◽  
R. González ◽  
G. Navarro ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Vapor Transport ◽  
Effect Transistor

Schottky Barrier 3C-SiC Nanowire Field Effect Transistor

2011 ◽  
Vol 679-680 ◽  
pp. 613-616 ◽  
Author(s):  
Konstantinos Rogdakis ◽  
Edwige Bano ◽  
Laurent Montes ◽  
Mikhael Bechelany ◽  
David Cornu ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Barriers ◽  
Catalyst Free ◽  
Effect Transistor ◽  
Contact Barrier ◽  
Gating Effect

Back-gated field effect transistors (FETs) based on catalyst-free grown 3C-SiC nanowire (NW) were fabricated. Devices with rectifying Source (S) and Drain (D) contacts have been observed. In contrast with the ohmic-like devices reported in the literature, the Schottky contact barrier (SB) at S/ D regions acts beneficially for the FET performance by suppressing the off-current. At high positive gate voltages (>10 V), the Schottky barriers tend to be more transparent leading to ION/IOFF ratio equal to ~ 103 in contrast to the weak gating effect of the ohmic-contacted 3C-SiC NWFETs.

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