The Reduction of Oxygen on Teflon‐Bonded Perovskite Oxide Electrodes

1978 ◽  
Vol 125 (6) ◽  
pp. 878-882 ◽  
Author(s):  
K. L. K. Yeung ◽  
A. C. C. Tseung
Keyword(s):  
Perovskite Oxide ◽  
Oxide Electrodes

Cathodic Polarization Phenomena of Perovskite Oxide Electrodes with Stabilized Zirconia

1987 ◽  
Vol 134 (11) ◽  
pp. 2656-2661 ◽  
Author(s):  
Y. Takeda ◽  
R. Kanno ◽  
M. Noda ◽  
Y. Tomida ◽  
O. Yamamoto
Keyword(s):  
Cathodic Polarization ◽  
Perovskite Oxide ◽  
Stabilized Zirconia ◽  
Oxide Electrodes ◽  
Polarization Phenomena

Photoelectrochemical behavior and surface characterization of some lanthanum-based perovskite oxide electrodes

1981 ◽  
Vol 6 (1) ◽  
pp. 59-83 ◽  
Author(s):  
V. Guruswamy ◽  
Oliver J. Murphy ◽  
V. Young ◽  
Glen Hildreth ◽  
J.O'M. Bockris
Keyword(s):  
Surface Characterization ◽  
Perovskite Oxide ◽  
Oxide Electrodes

Prospects for the Mott Transition Field Effect Transistor

2001 ◽  
Vol 666 ◽  
Author(s):  
J.A. Misewich ◽  
A.G. Schrott
Keyword(s):  
Contact Resistance ◽  
Charge Density ◽  
Surface Charge ◽  
Surface Charge Density ◽  
Growth Conditions ◽  
Perovskite Oxide ◽  
Mobility Limitations ◽  
Channel Mobility ◽  
Oxide Electrodes ◽  
Made In

ABSTRACTWe have been investigating the potential for a channel transistor which utilizes a perovskite oxide capable of undergoing the Mott metal-insulator transition as the channel material. Our experiments have identified three limitations to the performance of the oxide devices: contact resistance to the channel, mobility limitations due to polycrystalline channels, and inadequate field induced surface charge density. In this paper we review progress we have made in oxide electrodes and in improving channel growth conditions which have mitigated the limitations due to contact resistance and polycrystalline channels. We conclude with an outline of our approach to improving the field induced surface charge density.

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