Vacuum discharge from perovskite oxide electrodes

1997 ◽  
Vol 25 (4) ◽  
pp. 521-526 ◽  
Author(s):  
S.I. Shkuratov
1987 ◽  
Vol 134 (11) ◽  
pp. 2656-2661 ◽  
Author(s):  
Y. Takeda ◽  
R. Kanno ◽  
M. Noda ◽  
Y. Tomida ◽  
O. Yamamoto

1978 ◽  
Vol 125 (6) ◽  
pp. 878-882 ◽  
Author(s):  
K. L. K. Yeung ◽  
A. C. C. Tseung

1981 ◽  
Vol 6 (1) ◽  
pp. 59-83 ◽  
Author(s):  
V. Guruswamy ◽  
Oliver J. Murphy ◽  
V. Young ◽  
Glen Hildreth ◽  
J.O'M. Bockris

2001 ◽  
Vol 666 ◽  
Author(s):  
J.A. Misewich ◽  
A.G. Schrott

ABSTRACTWe have been investigating the potential for a channel transistor which utilizes a perovskite oxide capable of undergoing the Mott metal-insulator transition as the channel material. Our experiments have identified three limitations to the performance of the oxide devices: contact resistance to the channel, mobility limitations due to polycrystalline channels, and inadequate field induced surface charge density. In this paper we review progress we have made in oxide electrodes and in improving channel growth conditions which have mitigated the limitations due to contact resistance and polycrystalline channels. We conclude with an outline of our approach to improving the field induced surface charge density.


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