Phase Diagram of the In‐Ga‐As‐P Quaternary System and LPE Growth Conditions for Lattice Matching on InP Substrates

1978 ◽  
Vol 125 (1) ◽  
pp. 123-127 ◽  
Author(s):  
Kazuo Nakajima ◽  
Toshihiro Kusunoki ◽  
Kenzo Akita ◽  
Tsuyoshi Kotani
Keyword(s):  
Phase Diagram ◽  
Quaternary System ◽  
Growth Conditions ◽  
Lattice Matching ◽  
Inp Substrates

Equilibrium Phase Diagram of Li＋,Na＋∥,CO32－,B4O72－-H2O Quaternary System at 288 K

2002 ◽  
Vol 18 (09) ◽  
pp. 835-837 ◽  
Author(s):  
Sang Shi-Hua ◽  
◽  
Yin Hui-An ◽  
Tang Ming-Lin ◽  
Zhang Yun-Xiang
Keyword(s):  
Phase Diagram ◽  
Quaternary System ◽  
Equilibrium Phase ◽  
Equilibrium Phase Diagram

Influence of Growth Conditions on the Modulation Mechanism of Photoreflectance Spectra of Single InGaAs/InAlAs Quantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
Y. Baltagi ◽  
C. Bru ◽  
T. Benyatrou ◽  
M.A. Garcia-Perez ◽  
G. Guillot ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Growth Conditions ◽  
Surface Barrier ◽  
Single Quantum ◽  
Interface Defects ◽  
Growth Interruption ◽  
Different Temperatures ◽  
Inp Substrates ◽  
Pump Laser Beam

AbstractUsing Photoreflectance (PR) measurements, we have investigated In0.53Ga0.47As single quantum wells (SQW) with In0.52Al0.48As barriers grown by MBE on InP substrates. Unusual lineshapes of PR spectra are observed for the fundamental transition in some of the SQW. This phenomenon is shown to be independent on the widths of both the SQW (5nm or 10nm) and the surface barrier layer (between 65nm and 300nm). PR spectra are recorded at different temperatures and in different samples, as well as with a secondary pump laser beam. From these measurements, it is concluded that interface defects exist in the SQW grown at 525°C without growth interruption. Such defects are clearly evidenced in room temperature PR experiments and confirmed by PL measurements.

Surface Morphology and Lattice Misfit in Yig and La: Yig Films Grown by Lpe Method on GGG Substrate

1997 ◽  
Vol 494 ◽  
Author(s):  
Duk-yong Choi ◽  
Su-jin Chung
Keyword(s):  
Lattice Misfit ◽  
Growth Conditions ◽  
Lattice Parameter ◽  
Double Crystal ◽  
Lattice Matching ◽  
Flux System ◽  
La Doped ◽  
Effective Distribution Coefficient ◽  
Double Crystal Diffractometer ◽  
Effective Distribution

ABSTRACTY3Fe5O12(YIG) and La-doped YIG films were grown on the {111} GGG substrate using the PbO-B2O3 flux system. Pb, La incorporation and lattice misfit and annealing behaviors were studied. In the case of LPE growth of YIG film, lead ions from flux are substituted inevitably, and they play an important role in controlling film misfit. For a complete lattice matching, high supercooling is necessary in pure YIG growth, but this induces high defect concentration. In this experiment, La ions were added in the solution to sufficiently increase lattice parameter of the film grown under low supercooling. The concentration of substituted Pb and La were increased as the growth temperature was lowered and growth rate increased. The effective distribution coefficient of La was about 0.2 at a supercooling of 30 °C. The optimum growth conditions which bring about very small misfit were determined by measuring the misfit by double crystal diffractometer. Strain distributions of pre-annealed and annealed samples were investigated by triple crystal diffractometer.

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