TEM Observations of Pyramidal Hillocks Formed on (001) Silicon Wafers during Chemical Etching

1980 ◽  
Vol 127 (4) ◽  
pp. 910-913 ◽  
Author(s):  
Fumio Shimura
2018 ◽  
Vol 68 (8) ◽  
pp. 834-838
Author(s):  
Ha Young LEE ◽  
Ji-Yeon NOH ◽  
Min Sub KWAK ◽  
Kyung-Won LIM ◽  
Hyung Soo AHN ◽  
...  

Silicon ◽  
2020 ◽  
Author(s):  
Altyeb Ali Abaker Omer ◽  
Zudong He ◽  
Shihao Hong ◽  
Yuanchih Chang ◽  
Jie Yu ◽  
...  

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  

2019 ◽  
Vol 2 (6) ◽  
pp. 295-303 ◽  
Author(s):  
Kimihisa Kaneko ◽  
Akira Tamenori ◽  
Norbert Alleborn ◽  
Franz Durst

2016 ◽  
Vol 701 ◽  
pp. 97-100
Author(s):  
Keiichiro Niitsu ◽  
Yu Tayama ◽  
Hidenobu Maehara ◽  
Takatoshi Kato ◽  
Ji Wang Yan

Silicon wafers are the most widely used semiconductor substrates. It has been considered that silicon wafers after chemomechanical polishing (CMP) have no subsurface defects. However, in fact, defects such as dislocation and latent microcracks will remain in the wafers if CMP is performed under unsuitable conditions. In this study, we confirmed the existence of subsurface damages at a depth of submicron level in a silicon wafer after CMP, then used a nanosecond pulsed Nd:YAG laser to repair the subsurface damages. It was found that subsurface defects were recovered to a single crystalline structure by laser irradiation without changing the surface topography. The phase transformation of silicon before and after laser irradiation was confirmed by laser Raman spectroscopy and chemical etching using saturated aqueous solution of Ca(OH)2. The findings from this study contributes to improve the quality of silicon wafers for high-performance semiconductors.


Solar Energy ◽  
2021 ◽  
Vol 220 ◽  
pp. 1032-1039
Author(s):  
Jinbing Zhang ◽  
Lang Zhou ◽  
Xiaoying Zhou ◽  
Fayun Zhang ◽  
Yulong Liu ◽  
...  

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