Diffusion in Silicon from a Spin‐On Heavily Phosphorus‐Doped Oxide Source

1982 ◽  
Vol 129 (10) ◽  
pp. 2299-2302 ◽  
Author(s):  
D. L. Flowers ◽  
Schyi‐Yi Wu
Keyword(s):  
Phosphorus Doped ◽  
Doped Oxide

Selective reactive ion etching of phosphorus‐doped oxide over undoped SiO2

1993 ◽  
Vol 11 (2) ◽  
pp. 279-285 ◽  
Author(s):  
David Vender ◽  
Gottlieb S. Oehrlein ◽  
Geraldine C. Schwartz
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Phosphorus Doped ◽  
Doped Oxide

Stability of MOSFET Devices with Phosphorus‐Doped Oxide as Gate Dielectric

1977 ◽  
Vol 124 (12) ◽  
pp. 1897-1900 ◽  
Author(s):  
P. K. Chaudhari ◽  
R. A. Michaud ◽  
R. M. Quinn
Keyword(s):  
Gate Dielectric ◽  
Phosphorus Doped ◽  
Doped Oxide

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

scholarly journals Metal-free porous phosphorus-doped g-C3N4 photocatalyst achieving efficient synthesis of benzoin

RSC Advances ◽  
2021 ◽  
Vol 11 (21) ◽  
pp. 12682-12686
Author(s):  
Yuanjin Li ◽  
Shuhui Wang ◽  
Jin Wu ◽  
Qiuyan Wang ◽  
Changqiu Ma ◽  
...  
Keyword(s):  
Benzyl Alcohol ◽  
Conversion Rate ◽  
Oxygen Activation ◽  
Superoxide Radicals ◽  
Efficient Synthesis ◽  
Metal Free ◽  
Phosphorus Doped

Porous phosphorus-doped g-C3N4 (PCNT) has intensive oxygen activation ability to generate superoxide radicals, and can efficiently catalyze synthesis of benzoin from benzyl alcohol, with conversion rate and selectivity near to 100%.

scholarly journals Phosphorus-doped activated carbon catalyst for n-hexane dehydroaromatization reaction

2021 ◽  
pp. 106318
Author(s):  
Yong Li ◽  
Hong Zhao ◽  
Siyuan Chen ◽  
Shuhao Bao ◽  
Feifei Xing ◽  
...  
Keyword(s):  
Activated Carbon ◽  
Carbon Catalyst ◽  
Phosphorus Doped

scholarly journals Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

2021 ◽  
Vol 129 (10) ◽  
pp. 105701
Author(s):  
I. Stenger ◽  
M.-A. Pinault-Thaury ◽  
N. Temahuki ◽  
R. Gillet ◽  
S. Temgoua ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Homoepitaxial Layers ◽  
Phosphorus Doped

New Process Integration of Sequential Phosphorus-Doped Silicon for Trench Field Plate Power MOSFETs

2021 ◽  
pp. 1-1
Author(s):  
Kota Tomita ◽  
Tatsuya Shiraishi ◽  
Hiroaki Kato ◽  
Hiroyuki Kishimoto ◽  
Katsura Miyashita ◽  
...  
Keyword(s):  
Process Integration ◽  
Power Mosfets ◽  
Field Plate ◽  
New Process ◽  
Doped Silicon ◽  
Phosphorus Doped
Sign in / Sign up

Export Citation Format

Share Document