scholarly journals Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

2021 ◽  
Vol 129 (10) ◽  
pp. 105701
Author(s):  
I. Stenger ◽  
M.-A. Pinault-Thaury ◽  
N. Temahuki ◽  
R. Gillet ◽  
S. Temgoua ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Homoepitaxial Layers ◽  
Phosphorus Doped

Post-annealing effect upon phosphorus-doped ZnTe homoepitaxial layers grown by MOVPE

2007 ◽  
Vol 244 (5) ◽  
pp. 1634-1638 ◽  
Author(s):  
Katsuhiko Saito ◽  
Kenji Fujimoto ◽  
Kouji Yamaguchi ◽  
Tooru Tanaka ◽  
Mitsuhiro Nishio ◽  
...  
Keyword(s):  
Annealing Effect ◽  
Post Annealing ◽  
Homoepitaxial Layers ◽  
Phosphorus Doped

Measurement of electron mobility in epitaxial heavily‐phosphorus‐doped silicon

1984 ◽  
Vol 56 (8) ◽  
pp. 2250-2252 ◽  
Author(s):  
Jesús A. del Alamo ◽  
Richard M. Swanson
Keyword(s):  
Electron Mobility ◽  
Doped Silicon ◽  
Phosphorus Doped

A new dissociation mode for dislocations in silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 346-347
Author(s):  
A. Ourmazd ◽  
G.R. Booker ◽  
C.J. Humphreys
Keyword(s):  
Detailed Examination ◽  
Experimental Results ◽  
Dislocation Network ◽  
Weak Beam ◽  
Phosphorus Doped

A (111) phosphorus-doped Si specimen, thinned to give a TEM foil of thickness ∼ 150nm, contained a dislocation network lying on the (111) plane. The dislocation lines were along the three <211> directions and their total Burgers vectors,ḇt, were of the type , each dislocation being of edge character. TEM examination under proper weak-beam conditions seemed initially to show the standard contrast behaviour for such dislocations, indicating some dislocation segments were undissociated (contrast A), while other segments were dissociated to give two Shockley partials separated by approximately 6nm (contrast B) . A more detailed examination, however, revealed that some segments exhibited a third and anomalous contrast behaviour (contrast C), interpreted here as being due to a new dissociation not previously reported. Experimental results obtained for a dislocation along [211] with for the six <220> type reflections using (g,5g) weak-beam conditions are summarised in the table below, together with the relevant values.

Packing Effect on the Transfer Integrals and Mobility in α,α′-bis(dithieno[3,2-b:2′,3′-d]thiophene) (BDT) and its Heteroatom-Substituted Analogues

2011 ◽  
Vol 64 (12) ◽  
pp. 1587 ◽  
Author(s):  
Ahmad Irfan ◽  
Abdullah G. Al-Sehemi ◽  
Shabbir Muhammad ◽  
Jingping Zhang
Keyword(s):  
Electron Transfer ◽  
Electron Mobility ◽  
Hole Mobility ◽  
Experimental Investigations ◽  
Hole Transfer ◽  
Space Group ◽  
Space Groups ◽  
Transfer Integrals ◽  
Packing Effect ◽  
Good Agreement

Theoretically calculated mobility has revealed that BDT is a hole transfer material, which is in good agreement with experimental investigations. The BDT, NHBDT, and OBDT are predicted to be hole transfer materials in the C2/c space group. Comparatively, hole mobility of BHBDT is 7 times while electron mobility is 20 times higher than the BDT. The packing effect for BDT and designed crystals was investigated by various space groups. Generally, mobility increases in BDT and its analogues by changing the packing from space group C2/c to space groups P1 or . In the designed ambipolar material, BHBDT hole mobility has been predicted 0.774 and 3.460 cm2 Vs–1 in space groups P1 and , which is 10 times and 48 times higher than BDT (0.075 and 0.072 cm2 Vs–1 in space groups P1 and ), respectively. Moreover, the BDT behaves as an electron transfer material by changing the packing from the C2/c space group to P1 and .

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped
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