Electrical Properties and Shrinkage of Carbonized Photoresist Films and the Implications for Carbon Microelectromechanical Systems Devices in Conductive Media

2005 ◽  
Vol 152 (12) ◽  
pp. J136 ◽  
Author(s):  
Benjamin Y. Park ◽  
Lili Taherabadi ◽  
Chunlei Wang ◽  
Jim Zoval ◽  
Marc J. Madou
Keyword(s):  
Electrical Properties ◽  
Microelectromechanical Systems ◽  
Carbon Microelectromechanical Systems ◽  
Conductive Media

scholarly journals Polystyrene/magnetite nanocomposite synthesis and characterization: investigation of magnetic and electrical properties for using as microelectromechanical systems (MEMS)

2017 ◽  
Vol 35 (1) ◽  
pp. 105-110 ◽  
Author(s):  
Mohammad Hassan Omidi ◽  
Mahboobeh Alibeygi ◽  
Farideh Piri ◽  
Mohammad Masoudifarid
Keyword(s):  
Electrical Conductivity ◽  
Cyclic Voltammetry ◽  
Magnetic Properties ◽  
Electrical Properties ◽  
Microelectromechanical Systems ◽  
Synthesis And Characterization ◽  
Vibrating Sample Magnetometer ◽  
Ft Ir ◽  
Scanning Electron

AbstractIn this work, a novel polystyrene/Fe3O4 nanocomposite prepared by in-situ method is presented. Magnetic Fe3O4 nanoparticles were encapsulated by polystyrene. The FT-IR spectra confirmed polystyrene/Fe3O4 nanocomposite preparation. The electrical properties of prepared nanocomposite were investigated by cyclic voltammetry (CV). The CV analysis showed good electrical conductivity of the synthesized nanocomposite. Magnetic properties of the nanocomposite were studied by vibrating sample magnetometer (VSM). The VSM analysis confirmed magnetic properties of the nanocomposite. The morphology and the size of the synthesized nanocomposite were investigated by field emission scanning electron microscope (FESEM). According to the VSM and CV results, such nanocomposite can be used in microelectromechanical systems.

Carbon microelectromechanical systems as a substratum for cell growth

2008 ◽  
Vol 3 (3) ◽  
pp. 034116 ◽  
Author(s):  
G Turon Teixidor ◽  
R A Gorkin ◽  
P P Tripathi ◽  
G S Bisht ◽  
M Kulkarni ◽  
...  
Keyword(s):  
Cell Growth ◽  
Microelectromechanical Systems ◽  
Carbon Microelectromechanical Systems

C-MEMS/NEMS: A Novel Technology for Nanoscale Material Formation From Graphite Fiber to Ni and Si Nanowires

2004 ◽  
Author(s):  
Chunlei Wang ◽  
Rabih Zaouk ◽  
Kartikeya Malladi ◽  
Lili Taherabadi ◽  
Marc Madou
Keyword(s):  
Focused Ion Beam ◽  
Microelectromechanical Systems ◽  
Ion Beam ◽  
Dna Arrays ◽  
Si Nanowires ◽  
Sem Image ◽  
Carbon Structures ◽  
Potential Applications ◽  
The Many ◽  
Carbon Microelectromechanical Systems

Carbon microelectromechanical systems (C-MEMS) and carbon nanoelectromechanical system (C-NEMS) have received much attention because of the many potential applications. Some important applications include: DNA arrays, glucose sensors, microbatteries and biofuel cells. Microfabrication of carbon structures using current processing technology, including focused ion beam (FIB)1 and reactive ion etching (RIE)2, is time consuming and expensive. Low feature resolution, and poor repeatability of the carbon composition as well as widely varying properties of the resulting devices limits the use of screen printing of commercial carbon inks for C-MEMS. Our newly developed C-MEMS microfabrication technique is based on the pyrolysis of photo patterned resists34. Figure 1(a) shows a typical SEM image of C-MEMS/NEMS features with carbon posts connected by carbon fibers. Figure 1(b) shows a typical carbon post with carbon nanofibers on its side surfaces.

Exponential Conductivity Increase in Strained MoS2 via MEMS Actuation

MRS Advances ◽  
2019 ◽  
Vol 4 (38-39) ◽  
pp. 2135-2142
Author(s):  
A. Vidana ◽  
S. Almeida ◽  
M. Martinez ◽  
E. Acosta ◽  
J. Mireles ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electrical Properties ◽  
Microelectromechanical Systems ◽  
The Body ◽  
Experimental Results ◽  
Force Balance ◽  
Balance Model ◽  
Standard Process ◽  
Conductivity Increase ◽  
Cmos Compatible

ABSTRACTIn this work, a poly-Si0.35Ge0.65 microelectromechanical systems (MEMS)- based actuator was designed and fabricated using a CMOS compatible standard process to specifically strain a bi-layered (2L) MoS2 flake and measure its electrical properties. Experimental results of the MEMS-TMDC device show an increase of conductivity up to three orders of magnitude by means of vertical actuation using the substrate as the body terminal. A force balance model of the MEMS-TMDC was used to determine the amount of strain induced in the MoS2 flake. Strains as high as 3.3% is reported using the model fitted to the experimental data.

scholarly journals Fabrication of 3D Carbon Microelectromechanical Systems (C-MEMS)

10.3791/55649 ◽  
2017 ◽  
Author(s):  
Bidhan Pramanick ◽  
Sergio O. Martinez-Chapa ◽  
Marc Madou ◽  
Hyundoo Hwang
Keyword(s):  
Microelectromechanical Systems ◽  
Carbon Microelectromechanical Systems

scholarly journals Development of a Novel Gas-Sensing Platform Based on a Network of Metal Oxide Nanowire Junctions Formed on a Suspended Carbon Nanomesh Backbone

Sensors ◽  
2021 ◽  
Vol 21 (13) ◽  
pp. 4525
Author(s):  
Taejung Kim ◽  
Seungwook Lee ◽  
Wootaek Cho ◽  
Yeong Min Kwon ◽  
Jeong Min Baik ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gas Sensors ◽  
Microelectromechanical Systems ◽  
Gas Sensing ◽  
Limit Of Detection ◽  
Cost Effective ◽  
Sensing Platform ◽  
Batch Fabrication ◽  
Sensor Platform ◽  
Carbon Microelectromechanical Systems

Junction networks made of longitudinally connected metal oxide nanowires (MOx NWs) have been widely utilized in resistive-type gas sensors because the potential barrier at the NW junctions leads to improved gas sensing performances. However, conventional MOx–NW-based gas sensors exhibit limited gas access to the sensing sites and reduced utilization of the entire NW surfaces because the NW networks are grown on the substrate. This study presents a novel gas sensor platform facilitating the formation of ZnO NW junction networks in a suspended architecture by growing ZnO NWs radially on a suspended carbon mesh backbone consisting of sub-micrometer-sized wires. NW networks were densely formed in the lateral and longitudinal directions of the ZnO NWs, forming additional longitudinally connected junctions in the voids of the carbon mesh. Therefore, target gases could efficiently access the sensing sites, including the junctions and the entire surface of the ZnO NWs. Thus, the present sensor, based on a suspended network of longitudinally connected NW junctions, exhibited enhanced gas response, sensitivity, and lower limit of detection compared to sensors consisting of only laterally connected NWs. In addition, complete sensor structures consisting of a suspended carbon mesh backbone and ZnO NWs could be prepared using only batch fabrication processes such as carbon microelectromechanical systems and hydrothermal synthesis, allowing cost-effective sensor fabrication.

In situ TEM measurements of the electrical properties of interface dislocations

1992 ◽  
Vol 50 (2) ◽  
pp. 1338-1339
Author(s):  
F. M. Ross ◽  
R. Hull ◽  
D. Bahnck ◽  
J. C. Bean ◽  
L. J. Peticolas ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electronic Device ◽  
In Situ Tem ◽  
Device Performance ◽  
Misfit Dislocations ◽  
Electrical Characteristics ◽  
Strained Layer ◽  
Transmission Electron ◽  
Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

1992 ◽  
Vol 50 (2) ◽  
pp. 1422-1423
Author(s):  
A.M. Letsoalo ◽  
M.E. Lee ◽  
E.O. de Neijs
Keyword(s):  
Electrical Properties ◽  
Cadmium Telluride ◽  
Methanol Solution ◽  
Electrical Characteristics ◽  
Metal Contacts ◽  
Deposition Technique ◽  
Interfacial Layers ◽  
Semiconductor Contacts ◽  
Grown Single Crystal ◽  
Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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