Characterization of RF Sputter‐Deposited Ti‐W Schottky Barrier Diodes in Boron‐Doped Silicon

1984 ◽  
Vol 131 (7) ◽  
pp. 1712-1715 ◽  
Author(s):  
O. Paz ◽  
F. D. Auret ◽  
J. F. White
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Boron Doped ◽  
Doped Silicon ◽  
Sputter Deposited

Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

2002 ◽  
Vol 742 ◽  
Author(s):  
T. Kimoto ◽  
K. Hashimoto ◽  
K. Fujihira ◽  
K. Danno ◽  
S. Nakamura ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Doping Concentration ◽  
Schottky Barrier Diodes ◽  
Homoepitaxial Growth ◽  
Nitrogen Incorporation ◽  
Impurity Doping ◽  
Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

Characterization of aluminum/LPCVD polysilicon Schottky barrier diodes

1987 ◽  
Vol 30 (3) ◽  
pp. 339-343
Author(s):  
Dao-Long Chen ◽  
David W. Greve ◽  
Alberto M. Guzman
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes

Characterization of interface states at Au/InSb/InP(100) Schottky barrier diodes as a function of frequency

Vacuum ◽  
2000 ◽  
Vol 57 (2) ◽  
pp. 219-228 ◽  
Author(s):  
B. Akkal ◽  
Z. Benamara ◽  
B. Gruzza ◽  
L. Bideux
Keyword(s):  
Schottky Barrier ◽  
Interface States ◽  
Schottky Barrier Diodes

Preparation and Characterization of Epitaxial Yttrium Silicide on (111) Silicon

1987 ◽  
Vol 91 ◽  
Author(s):  
M. Gurvitch ◽  
A. F. J. Levi ◽  
R. T. Tung ◽  
S. Nakahara
Keyword(s):  
Schottky Barrier ◽  
Mean Free Path ◽  
Surface Cleaning ◽  
Preparation Technique ◽  
Electrical Measurements ◽  
Temperature Dependent ◽  
Cleaning Procedures ◽  
The Mean ◽  
Sputter Deposited

AbstractEpitaxial YSi2-x films have been fabricated. The smooth ∼430 Å thick silicide films on Si(111) substrates were characterized by a Rutherford backscattering minimum channeling yield, Xmin = 8%. The best previously reported result, Xmin = 26%, was achieved using a relatively exotic e-beam heating method. By contrast we formed YSi2-x using a straightforward furnace annealing technique. We used improved Si surface cleaning procedures, sputter-deposited Y films, and performed two-stage anneals in a vacuum of ∼ 10−8 torr. The results of our work establish YSi2-x as one of the best epitaxial silicides. We describe our preparation technique as well as the evidence for epitaxy. Electrical measurements (Schottky barrier, temperature dependent resistivity, Hall effect) are also presented. Low temperature resistivity of YSi2-x is found to obey simple T5 Bloch's law. Based on resistivity data, YSi2-x appears to have a Debye temperature of 310 K. According to Hall measurements, it is an electronic conductor with n = 2.7 × 1022 cm−3 and the mean free path of electrons is ∼ 87 Å at 4.2 K. We measure a Schottky barrier height of 0.36 eV between YSi2-x, and n-type Si.

Electrical Characterization of Au/Fluorene-Carbazole (FC)/p-Si Schottky Barrier Diodes

2016 ◽  
Vol 3 (5) ◽  
pp. 1255-1261 ◽  
Author(s):  
M. Yıldırım ◽  
N. Tuğluoğlu ◽  
Ö.F. Yüksel ◽  
A. Erdoğan ◽  
M. Kuş
Keyword(s):  
Schottky Barrier ◽  
Electrical Characterization ◽  
Schottky Barrier Diodes

Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination

2020 ◽  
Vol 29 (4) ◽  
pp. 047305
Author(s):  
Wei-Fan Wang ◽  
Jian-Feng Wang ◽  
Yu-Min Zhang ◽  
Teng-Kun Li ◽  
Rui Xiong ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Fabrication And Characterization
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