Ion‐Beam Etching of InP and Its Application to the Fabrication of High Radiance InGaAsP / InP Light Emitting Diodes

1984 ◽  
Vol 131 (10) ◽  
pp. 2373-2380 ◽  
Author(s):  
Osamu Wada
2006 ◽  
Vol 45 (10B) ◽  
pp. 8457-8461 ◽  
Author(s):  
Chang Hyun Jeong ◽  
Jong Tae Lim ◽  
June Hee Lee ◽  
Mi Suk Kim ◽  
Jeong Woon Bae ◽  
...  

2007 ◽  
Author(s):  
M. Y. Kim ◽  
Y. C. Park ◽  
S. S. Hong ◽  
B. K. Kim ◽  
D. W. Kim ◽  
...  

2011 ◽  
Vol 4 (3) ◽  
pp. 032104 ◽  
Author(s):  
Che-Kang Hsu ◽  
Jinn-Kong Sheu ◽  
Jia-Kuen Wang ◽  
Ming-Lun Lee ◽  
Kuo-Hua Chang ◽  
...  

2004 ◽  
Vol 201 (2) ◽  
pp. 239-244 ◽  
Author(s):  
M. A. Louren�o ◽  
M. S. A. Siddiqui ◽  
G. Shao ◽  
R. M. Gwilliam ◽  
K. P. Homewood

Author(s):  
T.D. Lowes ◽  
L. Wu ◽  
K. Eden ◽  
J. Trujillo

Abstract A new via interconnect failure mode found in organic light emitting diode (OLED) displays has been documented. Physical appearance, electrical performance, response to environmental stresses and root cause analyses have been studied using both simplistic and sophisticated failure analysis tools including focused ion beam etching and time of flight secondary ion mass spectroscopy (TOF-SIMS).


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