Transient‐Enhanced Diffusion during Furnace and Rapid Thermal Annealing of Ion‐Implanted Silicon

1985 ◽  
Vol 132 (8) ◽  
pp. 1962-1968 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
O. W. Holland
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Ion Implanted

scholarly journals Transient Enhanced Diffusion and Gettering of Dopants in Ion Implanted Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
S. J. Pennycook ◽  
J. Narayan ◽  
R. J. Culbertson
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solid Phase ◽  
Subsequent Annealing ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dopant Profile ◽  
Dopant Atoms ◽  
Ion Implanted

ABSTRACTWe have studied in detail the transient enhanced diffusion observed during furnace or rapid-thermal-annealing of ion-implanted Si. We show that the effect originates in the trapping of Si atoms by dopant atoms during implantation, which are retained during solid-phase-epitaxial (SPE) growth but released by subsequent annealing to cause a transient dopant precipitation or profile broadening. The interstitials condense to form a band of dislocation loops located at the peak of the dopant profile, which may be distinct from the band formed at the original amorphous/crystalline interface. The band can develop into a network and effectively getter the dopant. We discuss the conditions under which the various effects may or may not be observed, and discuss preliminary observations on As+ implanted Si.

High Performance 0.2 µm Dual Gate Complementary MOS Technologies by Suppression of Transient-Enhanced-Diffusion using Rapid Thermal Annealing

1998 ◽  
Vol 37 (Part 1, No. 3B) ◽  
pp. 1054-1058 ◽  
Author(s):  
Yukio Nishida ◽  
Hirokazu Sayama ◽  
Satoshi Shimizu ◽  
Takashi Kuroi ◽  
Akihiko Furukawa ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
High Performance ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion ◽  
Dual Gate

Rapid Thermal Annealing in Si

1984 ◽  
Vol 35 ◽  
Author(s):  
T.E. Seidel ◽  
C.S. Pai ◽  
D.J. Lischner ◽  
D.M. Maher ◽  
R.V. Knoell ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Removal Rate ◽  
Round Robin ◽  
Limiting Factor ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

ABSTRACTCertain aspects of Rapid Thermal Annealing (RTA) are reviewed. Temperature considerations are discussed. The implant disorder removal rate is measured (5eV removal energy for As induced damage). Shallower defect-free junctions are obtained using RTA. Results of a ”Round Robin”-RTA annealing are presented, transient enhanced diffusion is not prominent for As. New results for the concentration enhanced diffusion of As are presented. Diffusion from the channeling-tai1 region of shallow boron diffusions is noted as a limiting factor for producing shallow p+-junctions. Other issues are briefly discussed.

Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon

1985 ◽  
Vol 47 (12) ◽  
pp. 1321-1323 ◽  
Author(s):  
K. Cho ◽  
M. Numan ◽  
T. G. Finstad ◽  
W. K. Chu ◽  
J. Liu ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Enhanced Diffusion ◽  
Transient Enhanced Diffusion

The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron

1997 ◽  
Vol 469 ◽  
Author(s):  
K. Kyllesbech Larsen ◽  
P. A. Stoik ◽  
V. Privitera ◽  
J. G. M. van Berkum ◽  
W. B. de Boer ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Secondary Ion Mass Spectrometry ◽  
Electrical Activation ◽  
Enhanced Diffusion ◽  
Boron Doped ◽  
Effect Of Oxygen ◽  
P Type ◽  
And Diffusion ◽  
Ion Implanted

ABSTRACTTransient enhanced diffusion (TED) and electrical activation (EA) of ion-implanted boron during rapid thermal annealing has been investigated using three types of boron doped p-type Si (100) substrates: (a) Cz 20 Ωcm, (b) 3 μm thick 20 Ωcm epitaxial Si layer (epi-layer) grown on a 20 Ωcm Cz substrate, and (c) 3 μm thick 20 Ωcm epi-layer grown on a 5 mΩcin Fz substrate. The level of oxygen is known to decrease from material type (a) to (c). The samples were implanted with 20 keV, 5×1013cm−2boron and subjected to rapid thermal annealing (RTA) at various temperatures and times. The EA and TED were studied using spreading resistance profiling (SRP) and secondary ion mass spectrometry (SIMS), respectively. Although the amount of TED is almost identical for the three substrates, the EA is found to be significantly higher in the epi-layers compared to Cz substrates. It is speculated that the trapping of vacancies by oxygen in the ion-damaged region leads to an increase in the interstitial supersaturation during annealing, which then results in enhanced boron clustering and reduced electrical activation in the peak of the implanted profile.

Sign in / Sign up

Export Citation Format

Share Document