Effects of Corona‐Discharge Induced Oxygen Ion Beams and Electric Fields on Silicon Oxidation Kinetics: I . Ion Beam Effects

1985 ◽  
Vol 132 (5) ◽  
pp. 1163-1168 ◽  
Author(s):  
Douglas N. Modlin ◽  
William A. Tiller
Keyword(s):  
Corona Discharge ◽  
Electric Fields ◽  
Oxidation Kinetics ◽  
Ion Beam ◽  
Ion Beams ◽  
Silicon Oxidation ◽  
Oxygen Ion

scholarly journals Dynamical behavior of U-shaped double layers: cavity formation and filamentary structures

2005 ◽  
Vol 12 (6) ◽  
pp. 783-798 ◽  
Author(s):  
N. Singh ◽  
C. Deverapalli ◽  
A. Rajagiri ◽  
I. Khazanov
Keyword(s):  
Electric Fields ◽  
Large Amplitude ◽  
Electron Beams ◽  
Ion Beam ◽  
Plasma Heating ◽  
Dynamical Behavior ◽  
Ion Beams ◽  
Double Layers ◽  
Lower Hybrid ◽  
Ps Ii

Abstract. Observations from the Polar and FAST satellites have revealed a host of intriguing features of the auroral accelerations processes in the upward current region (UCR). These features include: (i) large-amplitude parallel ( ) and perpendicular () fluctuating as well as quasi-static electric fields in density cavities, (ii) fairly large-amplitude unipolar parallel electric fields like in a strong double layer (DL), (iii) variety of wave modes, (iv) counter-streaming of upward going ion beams and downward accelerated electrons, (v) horizontally corrugated bottom region of the potential structures (PS), in which electron and ion accelerations occur, (vi) filamentary ion beams in the corrugated PS, and (vii) both upward and downward moving narrow regions of parallel electric fields, inferred from the frequency drifts of the auroral kilometric radiations. Numerical simulations of U-shaped potential structures reveal that such observed features of the UCR are integral parts of dynamically evolving auroral U-shaped potential structures. Using a 2.5-D particle-in-cell (PIC) code we simulate a U-shaped broad potentialstructure (USBPS). The dynamical behavior revealed by the simulation includes: (i) recurring redistribution of the parallel potential drop (PPD) in the PS, (ii) its up and downward motion, (iii) formation of filaments in the potential and density structures, and (iv) creation of filamentary as well as broad extended density cavities. The formation of the filamentary structures is initiated by an ion-beam driven instability of an oblique ion mode trapped inside a broad cavity, when it becomes sufficiently thin in height. The filaments of the PS create filamentary electron beams, which generate waves at frequencies above the lower hybrid frequency, affecting plasma heating. This results in plasma evacuation and formation of a cavity extended in height. The waves associated with filamentary electron beams also evolve into electron holes. The transverse and parallel scale lengths of the regions with large and as well as their magnitudes are compared with satellite data.

Ion beam sputtering of SnO2 with low energy oxygen ion beams

1999 ◽  
Vol 341 (1-2) ◽  
pp. 230-233 ◽  
Author(s):  
Y.-S Choe ◽  
J.-H Chung ◽  
D.-S Kim ◽  
H.K Baik
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Oxygen Ion ◽  
Beam Sputtering

Simulation of Ion Beam Irradiation Effects in Perovskite Oxide Memristors

2014 ◽  
Vol 906 ◽  
pp. 89-95
Author(s):  
Ivan Knežević ◽  
Marija Obrenović ◽  
Zoran Rajović ◽  
Bratislav Iričanin ◽  
Predrag Osmokrović
Keyword(s):  
Radiation Effects ◽  
Ion Beam ◽  
Absorbed Dose ◽  
Ion Beams ◽  
Perovskite Oxide ◽  
Ion Beam Irradiation ◽  
Oxygen Ion ◽  
Voltage Polarity ◽  
Layer Resistance ◽  
Ion Species

Radiation effects of ion beams in perovskite oxide memristors are analyzedand linked to absorbed dose values, calculated from simulations of ion transport. Several ion species were used in simulations, chosen to represent certain commonly encountered radiation environments. Results indicate that considerable formation of oxygen ion - oxygen vacancy pairs, as well as advent of displaced rare earth and alkaline atoms, is to be expected. Oxygen vacancies can lead to a decrease or increase of active layer resistance, depending on applied voltage polarity. The loss of vacancies from the device is bound to impair the performance of the memristor. Calculated absorbed dose values in the memristor for various incident ion beams are typically on the order of several kGy.

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

Atomic force microscopy (AFM) of the topography of silicon surfaces exposed to ion beams

1992 ◽  
Vol 50 (2) ◽  
pp. 1132-1133
Author(s):  
Mark Denker ◽  
Jennifer Wall ◽  
Mark Ray ◽  
Richard Linton
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Incidence Angle ◽  
Ion Beam ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Ion Beams ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Trace Impurities ◽  
Energy Dose

Reactive ion beams such as O2+ and Cs+ are used in Secondary Ion Mass Spectrometry (SIMS) to analyze solids for trace impurities. Primary beam properties such as energy, dose, and incidence angle can be systematically varied to optimize depth resolution versus sensitivity tradeoffs for a given SIMS depth profiling application. However, it is generally observed that the sputtering process causes surface roughening, typically represented by nanometer-sized features such as cones, pits, pyramids, and ripples. A roughened surface will degrade the depth resolution of the SIMS data. The purpose of this study is to examine the relationship of the roughness of the surface to the primary ion beam energy, dose, and incidence angle. AFM offers the ability to quantitatively probe this surface roughness. For the initial investigations, the sample chosen was <100> silicon, and the ion beam was O2+.Work to date by other researchers typically employed Scanning Tunneling Microscopy (STM) to probe the surface topography.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

scholarly journals Yttrium Oxide Freeze-Casts: Target Materials for Radioactive Ion Beams

Materials ◽  
2021 ◽  
Vol 14 (11) ◽  
pp. 2864
Author(s):  
Eva Kröll ◽  
Miriana Vadalà ◽  
Juliana Schell ◽  
Simon Stegemann ◽  
Jochen Ballof ◽  
...  
Keyword(s):  
Pore Structure ◽  
Yttrium Oxide ◽  
Ion Beam ◽  
Isotope Separation ◽  
Target Material ◽  
Ion Beams ◽  
Radioactive Isotopes ◽  
Solid Loading ◽  
Radioactive Ion Beams ◽  
Freeze Casting

Highly porous yttrium oxide is fabricated as ion beam target material in order to produce radioactive ion beams via the Isotope Separation On Line (ISOL) method. Freeze casting allows the formation of an aligned pore structure in these target materials to improve the isotope release. Aqueous suspensions containing a solid loading of 10, 15, and 20 vol% were solidified with a unidirectional freeze-casting setup. The pore size and pore structure of the yttrium oxide freeze-casts are highly affected by the amount of solid loading. The porosity ranges from 72 to 84% and the crosslinking between the aligned channels increases with increasing solid loading. Thermal aging of the final target materials shows that an operation temperature of 1400 °C for 96 h has no significant effect on the microstructure. Thermo-mechanical calculation results, based on a FLUKA simulation, are compared to measured compressive strength and forecast the mechanical integrity of the target materials during operation. Even though they were developed for the particular purpose of the production of short-lived radioactive isotopes, the yttria freeze-cast scaffolds can serve multiple other purposes, such as catalyst support frameworks or high-temperature fume filters.

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