Gettering of Copper in Silicon‐on‐Insulator Structures Formed by Oxygen Ion Implantation

1987 ◽  
Vol 134 (8) ◽  
pp. 2027-2030 ◽  
Author(s):  
M. Delfino ◽  
M. Jaczynski ◽  
A. E. Morgan ◽  
C. Vorst ◽  
M. E. Lunnon ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Silicon On Insulator ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

TEM study of silicon on insulator structures obtained by oxygen ion implantation

1987 ◽  
Vol 18 (3) ◽  
pp. 247-248
Author(s):  
A. De Veirman ◽  
K. Yallup ◽  
J. Van Landuyt ◽  
H.E. Maes ◽  
S. Amelinckx
Keyword(s):  
Ion Implantation ◽  
Silicon On Insulator ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

Analysis of thin‐film silicon‐on‐insulator structures formed by low‐energy oxygen ion implantation

1991 ◽  
Vol 70 (7) ◽  
pp. 3605-3612 ◽  
Author(s):  
Y. Li ◽  
J. A. Kilner ◽  
A. K. Robinson ◽  
P. L. F. Hemment ◽  
C. D. Marsh
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Low Energy ◽  
Silicon On Insulator ◽  
Oxygen Ion ◽  
Thin Film Silicon ◽  
Oxygen Ion Implantation

The Microstructure of Silicon-on-Insulator Structures Formed by High Dose Oxygen Ion Implantation

1981 ◽  
Vol 7 ◽  
Author(s):  
R.F. Pinizzotto ◽  
B.L. Vaandrager ◽  
H.W. Lam
Keyword(s):  
Electron Microscopy ◽  
Dislocation Density ◽  
Ion Implantation ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
High Dose ◽  
Cross Sectional ◽  
Plan View ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

ABSTRACTCross-sectional and plan view transmission electron microscopy and high resolution scanning electron microscopy have been used to characterize the microstructure of silicon-on-insulator formed by high dose oxygen ion implantation. The complete microstructure was observed to be composed of a series of distinct zones. The top silicon layer was {100} single crystal with a very low dislocation density. The second layer was a mixture of fine grained polysilicon and amorphous SiO2. The third layer was pure SiO2 , followed by a second mixed layer. Finally, there was a layer of {100} silicon with an extremely high dislocation density. Some of the dislocations extended as far as 1 μm into the Si substrate. The relative widths of the layers were found to depend on the total ion fluence. The oxide layer did not occur for low doses and the two mixed layers merged into one zone. At high doses, the silicon-silicon dioxide interfaces are abrupt due to internal oxidation.

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