Electrochemical Characteristics of Amorphous Titanium Carbide Films Produced by Low‐Temperature Metal‐Organic Chemical Vapor Deposition (MOCVD)

1987 ◽  
Vol 134 (12) ◽  
pp. 3170-3175 ◽  
Author(s):  
Clare M. Alloca ◽  
Wendell S. Williams ◽  
A. E. Kaloyeros
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Titanium Carbide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Electrochemical Characteristics ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Low Temperature Metal Organic Chemical Vapor Deposition (LTMOCVD) of Electronic Materials

1989 ◽  
Vol 162 ◽  
Author(s):  
Alain E. Kaloyeros ◽  
Paul J. Toscano ◽  
Richard B. Rizk ◽  
Victor Tulchinsky ◽  
Alex Greene
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Semiconductor Surface ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposition Techniques

ABSTRACTHigh quality amorphous and crystalline silicon carbide thin films were produced by low temperature metal-organic chemical vapor deposition (LTMOCVD) using the organometallic precursor tetraethynylsilane, Si(C2 H)4. LTMOCVD, which was developed by the present investigators, uses single source precursors containing all the elemental constituents desired in the target material already directly bonded. This approach eliminates the inherent limitations of conventional MOCVD where separate precursors are used for each of the individual components of the desired compound. LTMOCVD thus combines the ability to deposit films at low temperatures, which is characteristic of physical deposition techniques, with the ability to provide complete coverage at steps or irregularities on the semiconductor surface, which is characteristic of chemical deposition techniques. In addition, the precursors employed are non-toxic, non-hazardous and easy to handle. Consequently, LTMOCVD can produce compound semiconductors on thermally fragile or chemically sensitive substrates. The SiC films were grown in a hot-wall CVD reactor at a reactor pressure of 10−6-10−3 torr and substrate temperature in the range 300–700°C. Characterization studies were performed using electron diffraction (ED), Auger electron spectroscopy (AES), Rutherford backscattering (RBS), x-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS). The results of these studies showed that the films were uniform, continuous, adherent and highly pure– contaminant levels were below the detection limits of the techniques employed.

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