Kinetics of Rapid Thermal Oxidation

1989 ◽  
Vol 136 (9) ◽  
pp. 2673-2676 ◽  
Author(s):  
C. A. Paz de Araujo ◽  
R. W. Gallegos ◽  
Y. P. Huang
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Oxidation kinetics of Si and SiGe by dry rapid thermal oxidation, in-situ steam generation oxidation and dry furnace oxidation

2017 ◽  
Vol 121 (24) ◽  
pp. 245308 ◽  
Author(s):  
Fabien Rozé ◽  
Olivier Gourhant ◽  
Elisabeth Blanquet ◽  
François Bertin ◽  
Marc Juhel ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Oxidation Kinetics ◽  
Steam Generation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Kinetics of Rapid Thermal Oxidation of Silicon

1992 ◽  
Vol 31 (Part 1, No. 10) ◽  
pp. 3436-3439 ◽  
Author(s):  
Hisashi Fukuda ◽  
Makoto Yasuda ◽  
Toshiyuki Iwabuchi
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Kinetics Of

Kinetics of Rapid Thermal Oxidation of Silicon

1987 ◽  
Vol 92 ◽  
Author(s):  
Stephan E. Lassig ◽  
Thomas J. Debolske ◽  
John L. Crowley
Keyword(s):  
Activation Energy ◽  
Thermal Oxidation ◽  
Kinetic Data ◽  
Halogen Lamp ◽  
Heating Source ◽  
Rapid Thermal Oxidation ◽  
Set Up ◽  
Lamp Source ◽  
Kinetics Of ◽  
Tungsten Halogen Lamp

ABSTRACTThis paper presents kinetic data for the rapid thermal oxidation (RTO) of <100 silicon using a wall stabilized low pressure arc lamp as the heating source. The data shows a single activation energy of 1.31 eV over the temperature range of 900°C to 1200°C and times of 60 seconds to 240 seconds. Comparisons are made with published kinetic data of RTO using tungsten-halogen lamp source [1] and with furnace oxidation kinetics for short times (<240 sec.) [2]. “Wet” oxidation results using O2:H2 as the oxidizing ambient reveal a lower activation energy and preexponential coefficient than the dry oxidation. Also presented are results using an experimental set-up which exhibits ultraviolet enhanced oxidation.

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

A Novel Process Simulator for Rapid Thermal Oxidation: RAPIDOX

1990 ◽  
Vol 36 (3-4) ◽  
pp. 183-188
Author(s):  
S S Purkar ◽  
S Singh ◽  
A D Shaligram
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Process Simulator
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