A Solid‐State Thin Film Cell for In Situ Transmission Electron Microscopy of Electrodeposited Silver on Gold

1989 ◽  
Vol 136 (8) ◽  
pp. 2214-2218 ◽  
Author(s):  
K. J. Hanson ◽  
J. M. Gibson ◽  
M. L. McDonald
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Transmission Electron

Platinum nano-interlayer enhanced interface for stable all-solid-state batteries observed via cryo-transmission electron microscopy

2020 ◽  
Vol 8 (27) ◽  
pp. 13541-13547 ◽  
Author(s):  
Ouwei Sheng ◽  
Chengbin Jin ◽  
Mei Chen ◽  
Zhijin Ju ◽  
Yujing Liu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Platinum Alloy ◽  
Electrolyte Interface ◽  
Transmission Electron ◽  
Solid State Batteries ◽  
All Solid State Batteries

A sputtered platinum nano-interlayer can react with lithium in situ to form a highly conductive lithium–platinum alloy, creating a stable lithium/electrolyte interface, which was atomically resolved by cryo-transmission electron microscopy.

In-Situ High Resolution Transmission Electron Microscopy of Dynamic Events During the Amorphous to Crystalline Phase Transformation in Silicon

1985 ◽  
Vol 62 ◽  
Author(s):  
M. A. Parker ◽  
T. W. Sigmon ◽  
R. Sinclair
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
Solid State ◽  
High Resolution ◽  
Elevated Temperatures ◽  
Video Recording ◽  
Dynamic Events ◽  
Transmission Electron

ABSTRACTA technique has been developed which employs high resolution transmission electron microscopy (HRTEM) for the observation of the atomic mechanisms associated with solid state phase transformation as they occur at elevated temperatures. It consists of the annealing in-situ of cross-section transmission electron microscopy (TEM) specimens that have been favorably oriented for lattice fringe imaging and the video-recording of dynamic events as they occur in real-time. By means of this technique, we report the first video-recorded lattice images of crystallographic defect motion in silicon, viz. the motion of dislocations and stacking faults, as well as the first such images of the atomic mechanisms responsible for the amorphous to crystalline (a-c) phase transformation, viz. heterogeneous nucleation of crystal nuclei, coalescence of crystal nuclei by co-operative atomic processes, ledge motion at the growth interface, and normal growth in silicon. This technique holds great potential for the elucidation of the atomic mechanisms involved in reaction kinetics in the solid state.

Analysis of Interface Dynamics in Solid-State Phase Transformations by In Situ Hot-Stage High-Resolution Transmission Electron Microscopy

1994 ◽  
Vol 332 ◽  
Author(s):  
James M. Howe ◽  
W. E. Benson ◽  
A. Garg ◽  
Y.-C. Chang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
High Resolution ◽  
Phase Transformations ◽  
Interface Motion ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Dynamics Of Interfaces

ABSTRACTIn situ hot-stage high-resolution transmission electron microscopy (HRTEM) provides unique capabilities for quantifying the dynamics of interfaces at the atomic level. Such information is critical for understanding the theory of interfaces and solid-state phase transformations. This paper provides a brief description of particular requirements for performing in situ hot-stage HRTEM, summarizes different types of in situ HRTEM investigations and illustrates the use of this technique to obtain quantitative data on the atomic mechanisms and kinetics of interface motion in precipitation, crystallization and martensitic reactions. Some limitations of in situ hot-stage HRTEM and future prospects of this technique are also discussed.

Solid-State Reactions in Fe/Si Multilayer Nanofilms

2014 ◽  
Vol 215 ◽  
pp. 144-149 ◽  
Author(s):  
Sergey M. Zharkov ◽  
Roman R. Altunin ◽  
Evgeny T. Moiseenko ◽  
Galina M. Zeer ◽  
Sergey N. Varnakov ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Electron Diffraction ◽  
Solid State Reaction ◽  
Room Temperature ◽  
Solid State Reactions ◽  
Transmission Electron ◽  
Reaction Processes

Solid-state reaction processes in Fe/Si multilayer nanofilms have been studied in situ by the methods of transmission electron microscopy and electron diffraction in the process of heating from room temperature up to 900ºС at a heating rate of 8-10ºС/min. The solid-state reaction between the nanolayers of iron and silicon has been established to begin at 350-450ºС increasing with the thickness of the iron layer.

Metastable Phases and the Molecular Beam Epitaxy of Metal Silicides

1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Interface Energy ◽  
Metastable Phases ◽  
Transmission Electron ◽  
Metal Silicides

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.

Finite element modeling of stress variation in multilayer thin-film specimens for in situ transmission electron microscopy experiments

2007 ◽  
Vol 22 (10) ◽  
pp. 2737-2741 ◽  
Author(s):  
H. Mei ◽  
J.H. An ◽  
R. Huang ◽  
P.J. Ferreira
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Finite Element Method ◽  
Transmission Electron Microscopy ◽  
Finite Element ◽  
Residual Stresses ◽  
Multilayer Thin Film ◽  
Stress Variation ◽  
Transmission Electron

Multilayer thin-film materials with various thicknesses, compositions, and deposition methods for each layer typically exhibit residual stresses. In situ transmission electron microscopy (TEM) is a powerful technique that has been used to determine correlations between residual stresses and the microstructure. However, to produce electron transparent specimens for TEM, one or more layers of the film are sacrificed, thus altering the state of stresses. By conducting a stress analysis of multilayer thin-film TEM specimens, using a finite element method, we show that the film stresses can be considerably altered after TEM sample preparation. The stress state depends on the geometry and the interactions among multiple layers.

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