Current‐Voltage Characteristics of Heavily Doped p‐Si in Aqueous  KOH

1989 ◽  
Vol 136 (5) ◽  
pp. 1420-1425 ◽  
Author(s):  
E. D. Palik ◽  
O. J. Glembocki ◽  
J. D. Rinko ◽  
I. Heard
Keyword(s):  
Current Voltage ◽  
Heavily Doped ◽  
Current Voltage Characteristics

Non Alloyed Ohmic Contacts for GaAs Coplanar Mixer Diodes

1981 ◽  
Vol 4 ◽  
Author(s):  
John M. Woodcock
Keyword(s):  
Ohmic Contacts ◽  
Laser Annealing ◽  
Matched Pairs ◽  
Conversion Loss ◽  
Fin Line ◽  
Current Voltage ◽  
Specific Contact ◽  
Heavily Doped ◽  
Current Voltage Characteristics ◽  
Balanced Mixer

ABSTRACTA Q-switched ruby laser has been used to anneal gallium arsenide which has either been implanted with a donor or coated with a thin layer of material containing the donor. Silicon nitride (∼500Å), germanium (∼50Å), tin (∼50Å) and silicon (∼500Å) have been used and in all cases laser annealing produces n-type doping levels in excess of 1019cm−3. Non alloyed ohmic contacts have been made on these heavily doped layers with specific contact resistances as low as 1.4 × 10−6Ω cm2. These contacts have been used in the fabrication of fine geometry coplanar mixer diodes. Ideality factors of 1.1 have been measured from the d.c. current voltage characteristics and diodes with a total capacitance of O.03pF have series resistances below 10 ohms. Matched pairs of these devices have given a 4.8dB conversion loss at 35GHz in a fin line balanced mixer.

scholarly journals Dielectric properties of oligonucleotides on the surface of Si nanosandwich structures

2018 ◽  
Vol 52 (5) ◽  
pp. 512
Author(s):  
Maxim A. Fomin ◽  
Andrey L. Chernev ◽  
Nicolay T. Bagraev ◽  
Leonid E. Klyachkin ◽  
Anton K. Emelyanov ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Tunneling Current ◽  
Scanning Tunneling ◽  
Silicon Nanostructures ◽  
Tunneling Microscopy ◽  
Dna Oligonucleotides ◽  
Current Voltage ◽  
Heavily Doped ◽  
Capacitance Characteristics ◽  
Current Voltage Characteristics

AbstractPlanar silicon nanostructures that are formed as a very narrow silicon quantum well confined by delta-barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current- voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

scholarly journals Исследования процессов транспорта носителей заряда в изотипных гетероструктурах типа n-=SUP=-+-=/SUP=--GaAs/n-=SUP=-0-=/SUP=--GaAs/n-=SUP=-+-=/SUP=--GaAs с тонким широкозонным барьером AlGaAs

2020 ◽  
Vol 54 (5) ◽  
pp. 452
Author(s):  
С.О. Слипченко ◽  
А.А. Подоскин ◽  
О.С. Соболева ◽  
В.С. Юферев ◽  
В.С. Головин ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Impact Ionization ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Gaas Layer ◽  
Balance Model ◽  
Current Voltage ◽  
Heavily Doped ◽  
Current Voltage Characteristics ◽  
Wide Gap

Abstract Experimental studies of n ^+-GaAs/ n ^0-GaAs/ n ^+-GaAs isotype heterostructures with a 100-nm-thick wide-gap N ^0-AlGaAs barrier situated in the n ^0-GaAs region are carried out. It is shown that the current–voltage characteristic of the structures under study has a negative-differential-resistance (NDR) portion, with the transition to this region occurring with a time delay that may reach tens of nanoseconds. It is found that operation in the NDR region is associated with the onset of impact-ionization process. Numerical analysis in terms of the energy-balance model demonstrated that the transition to the NDR region is associated with the formation of an electric field domain that covers a part of the lightly doped region between the thin wide-gap N ^0-AlGaAs barrier and the heavily doped n ^+-GaAs layer and with the onset of impact ionization at the interface with the heavily doped n ^+-GaAs layer. A comparative analysis of the experimental data and the modeling results showed that, for the current–voltage characteristics of the heterostructures under study to be correctly described, the model should take into account the less pronounced ability of a heterojunction to restrict carrier transport in the barrier layer.

ChemInform Abstract: Current-Voltage Characteristics of Heavily Doped p-Si in Aqueous KOH.

ChemInform ◽  
1989 ◽  
Vol 20 (38) ◽  
Author(s):  
E. D. PALIK ◽  
O. J. GLEMBOCKI ◽  
J. D. RINKO ◽  
I. JUN. HEARD
Keyword(s):  
Current Voltage ◽  
Heavily Doped ◽  
Current Voltage Characteristics
Sign in / Sign up

Export Citation Format

Share Document