Monte Carlo Simulations of Molecular Beam Epitaxy on Si(001) Surfaces

1989 ◽  
Vol 136 (4) ◽  
pp. 1132-1137 ◽  
Author(s):  
S. A. Barnett ◽  
A. Rockett ◽  
R. Kaspi
1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.


1990 ◽  
Vol 202 ◽  
Author(s):  
Peter M. Richards

ABSTRACTSteady state roughness of surfaces growing by molecular beam epitaxy is investigated by Monte Carlo simulations under conditions where an ion beam is also present which sputters adatoms off the surface. If the sputtering is random, it only increases the roughness. But if the sputtering probability is strongly dependent on the binding energy of an adatom within a cluster or island, the ions can have a smoothening effect. Physical arguments are given in support of the results.


2006 ◽  
Vol 125 (7) ◽  
pp. 074705 ◽  
Author(s):  
Rodolfo Omar Uñac ◽  
Victor Bustos ◽  
Jarod Wilson ◽  
Giorgio Zgrablich ◽  
Francisco Zaera

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