Monte Carlo simulations of the growth of diamond-structure semiconductors and surface-reflected electron-beam intensities during molecular-beam epitaxy

1988 ◽  
Vol 6 (2) ◽  
pp. 763 ◽  
Author(s):  
A. Rockett
Keyword(s):  
Monte Carlo ◽  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Diamond Structure

Effects of Hydrogen on Nucleation of Islands During Si(001) Mbe Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
Kazuki Mizushima ◽  
Pavel Šmilauer ◽  
Dimitri D. Vvedensky
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Kinetic Monte Carlo ◽  
High Density ◽  
Temperature Dependent ◽  
Mbe Growth ◽  
Temperature Range ◽  
Kinetic Monte Carlo Simulations

AbstractKinetic Monte Carlo simulations with two species (Si and H) have been performed to identify the mechanism behind the H-induced creation of a strongly temperature-dependent high density of Si islands in the temperature range of 300–550 K during molecular-beam epitaxy on Si(001) surface. A model is proposed to explain this effect as a result of an activated exchange between H and Si at Si island edges.

Monte Carlo Simulations of Molecular Beam Epitaxy on Si(001) Surfaces

1989 ◽  
Vol 136 (4) ◽  
pp. 1132-1137 ◽  
Author(s):  
S. A. Barnett ◽  
A. Rockett ◽  
R. Kaspi
Keyword(s):  
Monte Carlo ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam

scholarly journals Kinetics of Molecular Beam Epitaxy: Effect of Ion-Induced Sputtering

1990 ◽  
Vol 202 ◽  
Author(s):  
Peter M. Richards
Keyword(s):  
Monte Carlo ◽  
Steady State ◽  
Binding Energy ◽  
Molecular Beam Epitaxy ◽  
Monte Carlo Simulations ◽  
Molecular Beam ◽  
Ion Beam ◽  
Kinetics Of

ABSTRACTSteady state roughness of surfaces growing by molecular beam epitaxy is investigated by Monte Carlo simulations under conditions where an ion beam is also present which sputters adatoms off the surface. If the sputtering is random, it only increases the roughness. But if the sputtering probability is strongly dependent on the binding energy of an adatom within a cluster or island, the ions can have a smoothening effect. Physical arguments are given in support of the results.

ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-607-C4-614
Author(s):  
R. J. MALIK ◽  
A. F.J. LEVI ◽  
B. F. LEVINE ◽  
R. C. MILLER ◽  
D. V. LANG ◽  
...  
Keyword(s):  
Electron Beam ◽  
Molecular Beam Epitaxy ◽  
Band Gap ◽  
Molecular Beam ◽  
Beam Source ◽  
Device Structures ◽  
Graded Band Gap
Sign in / Sign up

Export Citation Format

Share Document