Use of Laser‐Directed Chemical Vapor Deposition to Fabricate Durable, Optically Transparent, Platinum Thin Film Electrodes

1990 ◽  
Vol 137 (4) ◽  
pp. 1162-1166 ◽  
Author(s):  
Dan Rooney ◽  
D. Negrotti ◽  
T. Byassee ◽  
D. Macero ◽  
J. Chaiken ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Optically Transparent ◽  
Thin Film Electrodes ◽  
Platinum Thin Film

scholarly journals Reflective Silver Thin Film Electrodes from Commercial Silver(I) Triflate via Aerosol-Assisted Chemical Vapor Deposition

2018 ◽  
Vol 1 (7) ◽  
pp. 3724-3732 ◽  
Author(s):  
Sebastian C. Dixon ◽  
Joe A. Manzi ◽  
Michael J. Powell ◽  
Claire J. Carmalt ◽  
Ivan P. Parkin
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silver Thin Film ◽  
Thin Film Electrodes

Single step aerosol assisted chemical vapor deposition of p–n Sn(ii) oxide–Ti(iv) oxide nanocomposite thin film electrodes for investigation of photoelectrochemical properties

2018 ◽  
Vol 42 (7) ◽  
pp. 5256-5266 ◽  
Author(s):  
Rabia Naeem ◽  
Muhammad Ali Ehsan ◽  
Abdul Rehman ◽  
Zain Hassan Yamani ◽  
Abbas Saeed Hakeem ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Nanocomposite Film ◽  
Chemical Vapor ◽  
Single Step ◽  
Photoelectrochemical Properties ◽  
Nanocomposite Thin Film ◽  
Step Method ◽  
Thin Film Electrodes

Novel p–n SnO–TiO2 nanocomposite film electrodes were fabricated through a single step method and their photoelectrocatalytic properties were evaluated.

Aerosol-Assisted Chemical Vapor Deposition of Silver Thin Film Electrodes for Electrochemical Detection of 2-Nitrophenol

2018 ◽  
Vol 165 (7) ◽  
pp. B302-B309 ◽  
Author(s):  
Muhammad Ali Ehsan ◽  
Md. Abdul Aziz ◽  
Abdul Rehman ◽  
Abbas Saeed Hakeem ◽  
Mohammed Ameen Ahmed Qasem ◽  
...  
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Electrochemical Detection ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silver Thin Film ◽  
Thin Film Electrodes

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

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