Kinetics of Oxygen Gas Evolution on Hydrous Rhodium Oxide Films

1990 ◽  
Vol 137 (2) ◽  
pp. 466-471 ◽  
Author(s):  
Eugene J. M. O'Sullivan ◽  
Laurence D. Burke
Keyword(s):  
Oxide Films ◽  
Gas Evolution ◽  
Rhodium Oxide ◽  
Oxygen Gas ◽  
Kinetics Of

Oxygen Precipitation Along Individual Ion Tracks During High Dose O+ Implantation into Silicon

1987 ◽  
Vol 93 ◽  
Author(s):  
Witold P. Maszara
Keyword(s):  
Silicon Layer ◽  
High Dose ◽  
Regular Array ◽  
Ion Tracks ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Oxygen Gas ◽  
Kinetics Of ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTSilicon wafers with and without protective1Ahermil oxide were implanted with oxygen at 150keV with doses 1.6 – 2.0×1018 cm−2. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy (SIMS) were used to study the top silicon layer remaining above the implanted buried oxide. regular array of spheroidal voids filled with oxygen gas was observed only in the samples that were not protected by the oxide. The voids were aligned into individual columns whose crystallographic orientation with respect to the host silicon lattice matched the direction of the implantation. The origin and the kinetics of their formation are discussed.

Kinetics of the formation of anodic oxide films on tantalum

1963 ◽  
Vol 59 ◽  
pp. 2888 ◽  
Author(s):  
P. H. G. Draper ◽  
P. W. M. Jacobs
Keyword(s):  
Oxide Films ◽  
Anodic Oxide ◽  
Anodic Oxide Films ◽  
Kinetics Of

Physical properties and growth kinetics of co-sputtered indium-zinc oxide films

2009 ◽  
Vol 24 (9) ◽  
pp. 095019 ◽  
Author(s):  
Changgang Huang ◽  
Meili Wang ◽  
Quanlin Liu ◽  
Yongge Cao ◽  
Zhonghua Deng ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Physical Properties ◽  
Growth Kinetics ◽  
Oxide Films ◽  
Zinc Oxide Films ◽  
Indium Zinc Oxide ◽  
Kinetics Of
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