Thin Film Deposition Using a Dielectric‐barrier Discharge

1991 ◽  
Vol 138 (9) ◽  
pp. 2741-2744 ◽  
Author(s):  
M. Segers ◽  
S. K. Dhali
Keyword(s):  
Thin Film ◽  
Dielectric Barrier Discharge ◽  
Barrier Discharge ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Dielectric Barrier

scholarly journals Positioning of the Precursor Gas Inlet in an Atmospheric Dielectric Barrier Reactor, and its Effect on the Quality of Deposited TiOx Thin Film Surface

10.14311/1767 ◽  
2013 ◽  
Vol 53 (2) ◽  
Author(s):  
Jan Píchal ◽  
Julia Klenko
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Barrier Discharge ◽  
Atmospheric Pressure ◽  
Barrier Discharge ◽  
Film Surface ◽  
Dielectric Barrier ◽  
Thin Film Surface ◽  
Atmospheric Dielectric Barrier Discharge

Thin film technology has become pervasive in many applications in recent years, but it remains difficult to select the best deposition technique. A further consideration is that, due to ecological demands, we are forced to search for environmentally benign methods. One such method might be the application of cold plasmas, and there has already been a rapid growth in studies of cold plasma techniques. Plasma technologies operating at atmospheric pressure have been attracting increasing attention. The easiest way to obtain low temperature plasma at atmospheric pressure seems to be through atmospheric dielectric barrier discharge (ADBD). We used the plasma enhanced chemical vapour deposition (PECVD) method applying atmospheric dielectric barrier discharge (ADBD) plasmafor TiOx thin films deposition, employing titanium isopropoxide (TTIP) and oxygen as reactants, and argon as a working gas. ADBD was operated in filamentary mode. The films were deposited on glass. We studied the quality of the deposited TiOx thin film surface for various precursor gas inlet positions in the ADBD reactor. The best thin films quality was achieved when the precursor gases were brought close to the substrate surface directly through the inlet placed in one of the electrodes.High hydrophilicity of the samples was proved by contact angle tests (CA). The film morphology was tested by atomic force microscopy (AFM). The thickness of the thin films varied in the range of (80 ÷ 210) nm in dependence on the composition of the reactor atmosphere. XPS analyses indicate that composition of the films is more like the composition of TiOxCy.

SIO2 thin film preparation using dielectric barrier discharge-driven excimer lamps

1999 ◽  
Vol 138-139 ◽  
pp. 340-343 ◽  
Author(s):  
Noritaka Takezoe ◽  
Atsushi Yokotani ◽  
Kou Kurosawa ◽  
Wataru Sasaki ◽  
Tatsushi Igarashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Barrier Discharge ◽  
Barrier Discharge ◽  
Dielectric Barrier ◽  
Excimer Lamps ◽  
Sio2 Thin Film ◽  
Thin Film Preparation ◽  
Film Preparation

Suppression of Dielectric Barrier Discharge Charge Build up Using a Partially Conducting Thin Film

2009 ◽  
Author(s):  
Dmitry Opaits ◽  
Alexandre Likhanskii ◽  
Sohail Zaidi ◽  
Mikhail Shneider ◽  
Sergey Macheret ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Barrier Discharge ◽  
Barrier Discharge ◽  
Dielectric Barrier

Control of composite thin film made in an Ar/isopropanol/TiO2nanoparticles dielectric barrier discharge by the excitation frequency

2017 ◽  
Vol 14 (12) ◽  
pp. 1700049 ◽  
Author(s):  
Paul Brunet ◽  
Rocío Rincón ◽  
Jean-Michel Martinez ◽  
Zineb Matouk ◽  
Fiorenza Fanelli ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Barrier Discharge ◽  
Barrier Discharge ◽  
Excitation Frequency ◽  
Composite Thin Film ◽  
Dielectric Barrier ◽  
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